TJ60S06M3L(T6L1NQ vs TJ60S06M3LT6L1.NQ 对比
详细并排对比 TJ60S06M3L(T6L1NQ 出自 Toshiba 和 TJ60S06M3LT6L1.NQ 出自 Toshiba。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | TJ60S06M3L(T6L1NQ | TJ60S06M3LT6L1.NQ |
|---|---|---|
| 品牌 | Toshiba | Toshiba |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.52 |
| 晶体管类型 | P-Channel MOSFET | — |
| Technology | Silicon U-MOS (trench) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDSS) | -60 V | — |
| Gate-Source Voltage (VGSS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| RDS(ON) Max @ VGS = -10 V | 14.5 mOhm | — |
| RDS(ON) Typ @ VGS = -10 V | 11.2 mOhm | — |
| Gate Threshold Voltage (Vth) | -3.0 V typ (VDS = -1 mA, enhancement mode) | — |
| Input Capacitance (Ciss) | 7760 pF typ | 7760 pF |
| Leakage Current (IDSS) Max | -10 uA (VDS = -40 V) | — |
| 工作温度范围 | -55 C to +175 C | — |
| 封装 | DPAK+ (TO-252-3) | DPAK+ (TO-252) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| Polarity | — | P-channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| 工作温度 | — | -55C to +150C (Tj) |
| MSL 等级 | — | 1 (unlimited) |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |