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FQD6N25TM - 250V 4.4A N-Channel QFET MOSFET | onsemi
The onsemi FQD6N25TM is an N-Channel QFET power MOSFET rated at 250 V drain-to-source voltage and 4.4 A continuous drain current, housed in a surface-mount TO-252AA (DPAK) package with 1.0 ohm RDS(on) at VGS = 10 V. This enhancement-mode planar stripe DMOS device is produced using onsemi's (formerly Fairchild Semiconductor) proprietary QFET technology, delivering low gate charge of 6.6 nC typical and fast switching characteristics suited to off-line switchers, DC-DC converters, and general-purpose power switching. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which the gate voltage modulates the conductivity of a channel between drain and source. Power MOSFETs such as the FQD6N25TM belong to the discrete semiconductor family and sit within the broader taxonomy: power MOSFET -> MOSFET -> field-effect transistor -> discrete semiconductor -> semiconductor. Their key advantages over bipolar transistors include high input impedance, fast switching, and no minority-carrier storage time, which makes them the workhorse of modern switch-mode power supplies. Key features include a 250 V VDS rating that provides ample headroom for 110-220 V rectified off-line applications, a continuous ID of 4.4 A at TC with pulsed capability well above this, an ultra-low RDS(on) of 1.0 ohm at VGS = 10 V to minimize conduction losses, and a typical gate charge of 6.6 nC that reduces drive losses at high frequency. The TO-252AA surface-mount footprint with an exposed drain tab supports 2.5 W dissipation at TA and 45 W at TC, and the device is RoHS compliant. The FQD6N25TM uses onsemi's planar stripe DMOS process technology, which trades slightly higher specific on-resistance for lower cost and excellent ruggedness. Its avalanche-rated single-pulse energy and dv/dt tolerance make it suitable for snubberless switching topologies, while the intrinsic body diode supports use in half-bridge and synchronous-rectifier-replacement circuits where a dedicated Schottky is not present. Typical applications include AC-DC flyback and forward converters, solid-state relay (SSR) outputs, motor control drivers, and general-purpose low-side switches. Designers select this part where the 250 V rating provides margin against voltage transients on rectified mains rails, and where 4.4 A continuous current is sufficient without active cooling. When designing with this part, ensure the gate drive swing reaches at least 10 V to fully enhance the channel and achieve the rated 1.0 ohm RDS(on); a 12 V gate drive is recommended for best performance. Provide adequate copper area on the drain tab to keep junction temperature below 150 C under worst-case load, and consider an external TVS or snubber for highly inductive loads to stay within the device's avalanche rating. This page synthesizes distributor pricing, drop-in alternatives from multiple manufacturers, and practical design notes that go beyond the raw manufacturer datasheet, giving engineers a single consolidated reference for sourcing, substitution, and circuit design with the FQD6N25TM.
FQP50N06 - 60V 50A N-Channel MOSFET TO-220 | onsemi
The onsemi FQP50N06 is a 60V, 50A N-Channel enhancement-mode power MOSFET housed in a TO-220-3 through-hole package, originally produced using Fairchild Semiconductor's proprietary planar stripe DMOS technology (now part of onsemi). Designed for high-current switching, it offers a low on-resistance of 0.022 ohm typical at VGS=10V, supporting high-efficiency power conversion across automotive, industrial, and consumer applications. An N-Channel MOSFET is a voltage-controlled semiconductor switch that turns on when a positive voltage is applied to the gate relative to the source. It sits within the broader taxonomy: MOSFET -> field-effect transistor -> discrete semiconductor -> power semiconductor. N-Channel devices are preferred over P-Channel in most high-current applications because they offer lower Rds(on) per unit silicon area, lower conduction losses, and higher transconductance for the same die size, making them the default choice for low-side switches, synchronous rectifiers, and motor drivers. Key features include a 60V drain-source breakdown voltage (V(BR)DSS), 50A continuous drain current at Tc, 120W maximum power dissipation, fast switching speed, and avalanche energy rating. The TO-220-3 package provides excellent thermal dissipation with a tab that can be bolted to a heatsink for high-current applications, while the through-hole leads provide mechanical robustness for demanding environments. The FQP50N06 utilizes DMOS (Double-Diffused Metal-Oxide Semiconductor) technology with a planar stripe cell layout, achieving an excellent trade-off between low on-resistance, high avalanche ruggedness, and fast switching. Its low gate charge (Qg typically 32 nC) and low input capacitance enable efficient high-frequency operation in switching power supply and motor drive topologies. The body diode supports inductive load switching. Typical applications include DC-DC converters, motor drive circuits (H-bridge, half-bridge), solenoid and relay drivers, LED lighting drivers, power inverters, UPS systems, and audio amplifiers. In switching power supplies it is used as the main switching element or synchronous rectifier; in automotive applications it drives fuel injectors, lamps, and small motors; in audio amplifiers it serves as the output stage of Class D amplifiers and as a switch in protection circuits. When designing with this device, ensure the gate drive voltage reaches at least 10V for full enhancement and minimum Rds(on). Add a gate-source pull-down resistor (10-100 kohm) to prevent inadvertent turn-on from dv/dt-induced gate charge. For switching frequencies above 50 kHz, use a dedicated gate driver IC rather than driving the gate directly from a logic output, and always include a snubber or TVS across the drain-source for inductive loads. This page synthesizes distributor pricing, drop-in alternatives, application notes, and PCB design guidance that goes beyond the manufacturer datasheet to accelerate design-in decisions.
FR107-B - 1A 1000V Fast Recovery Rectifier DO-41 | Rectron
The Rectron FR107-B is an axial-leaded 1.0 A fast recovery rectifier diode rated at 1000 V reverse voltage with a 150 ns reverse recovery time, housed in the industry-standard DO-41 (DO-204AC) through-hole package. Its combination of 1 A average forward current, 30 A non-repetitive peak surge current (IFSM), and 150 ns trr makes it a workhorse for line-frequency rectification and high-frequency freewheeling circuits. A fast recovery rectifier is a discrete semiconductor device designed to conduct current in one direction while switching from the conducting (forward) state to the blocking (reverse) state far faster than a standard 50 Hz rectifier. FR107-B belongs to the rectifier diode family within discrete semiconductors, sitting alongside general-purpose rectifiers (1N400x series), Schottky diodes, and ultrafast rectifiers. Its primary role is AC-to-DC conversion in switched-mode power supplies (SMPS), motor drive snubbers, and inductive load freewheel paths where the slow recovery of a 1N4007 would cause excessive switching loss or shoot-through. Key features include a low forward voltage drop of typically 1.3 V at 1 A (max 1.7 V), a peak surge capability of 30 A for 8.3 ms half-sine pulses, glass passivated die construction, and a molded epoxy body that meets UL 94V-0 flammability. The axial lead format simplifies PCB insertion and wave-soldering on through-hole boards. Operating junction temperature spans -55C to +150C, covering industrial and automotive underhood environments. Technically, the device uses a diffused PN junction with controlled minority carrier lifetime to achieve the 150 ns recovery specification without sacrificing surge ruggedness. The glass passivation layer eliminates surface instability and leakage drift, ensuring stable high-temperature reverse current below 5 uA at 25C and 50 uA at full rated voltage and temperature. Typical applications include switch-mode power supply output rectifiers, DC-DC converter freewheel diodes, inverter stage snubbers, and polarity protection in industrial controls. The 1000 V rating also supports 230 VAC line-rectified rails directly without derating. When designing with FR107-B, always verify that the switching frequency of the host converter is consistent with a 150 ns trr. Above approximately 100 kHz, an ultrafast (UF4007-class, 75 ns) or Schottky part is preferable. Reverse voltage margin of at least 20% should be applied for reliability. This page synthesizes distributor pricing, same-brand drop-in alternatives (FR107, FR157-B), cross-brand DO-41 equivalents from Diodes Incorporated and EVVO, application guidance, and a DO-41 pinout diagram - practical engineering context not found in the bare datasheet.
FR107-G - 1A 1000V Fast Recovery Rectifier DO-41 | Comchip
The Comchip Technology FR107-G is a 1 A, 1000 V fast-recovery axial-lead rectifier diode in a DO-41 (DO-204AL) through-hole package, designed as the industry-standard FR107 with a Comchip green-packaging (-G) suffix that denotes RoHS/lead-free compliance. It features a maximum repetitive peak reverse voltage (VRRM) of 1000 V, average rectified forward current (IO) of 1 A, and a forward surge current (IFSM) of 30 A over a single 8.3 ms half-sine pulse. Reverse recovery time (trr) is specified at 500 ns, making this part genuinely "fast-recovery" rather than a standard-recovery 1N4007-class rectifier, and that distinction matters in switch-mode power supply freewheeling and high-frequency rectification applications. A fast-recovery rectifier (often abbreviated FRR or FRD) is a discrete semiconductor diode whose minority-carrier lifetime has been intentionally shortened so that it ceases conduction quickly when reverse-biased. Within the broader taxonomy, FR107 sits as: fast-recovery rectifier -> recovery rectifier -> rectifier diode -> discrete semiconductor. Fast-recovery parts differ from standard-recovery parts (such as the 1N4007) by their deliberately reduced trr, and they differ from ultrafast-recovery parts (UF4007) only by trr value: 500 ns versus 75 ns. Fast-recovery rectifiers are widely used in 50/60 Hz line-frequency rectification, low-frequency switch-mode freewheeling, and DC output stages of offline power supplies where switching losses in the rectifier are tolerable but where reverse recovery at line frequency must not introduce audible noise or harmonic distortion. Key features of the FR107-G include a low forward voltage drop of 1.3 V at 1 A, glass-passivated junction construction that improves long-term stability and reverse-leakage performance, molded epoxy body rated UL 94V-0 for flame retardance, and axial leads compatible with through-hole wave soldering or insertion mounting. The part is lead-free and RoHS-compliant, and the -G suffix (Comchip convention) signals the green/lead-free finish as distinct from the legacy SnPb finish on the same die. Operating junction temperature range extends from -55 °C to +150 °C. Typical applications for the FR107-G include 50/60 Hz bridge rectifiers in linear and switched-mode power supplies, freewheeling diodes across inductive loads such as relay coils and solenoids, snubber diodes in flyback converters, and reverse-polarity protection circuits where 1 A continuous and 30 A peak surge ratings are sufficient. Designers also use FR107-family parts in low-cost DC adapters, battery chargers, and hobby/educational power-electronics kits. The DO-41 axial package, paired with the part's high surge capability, makes it a robust workhorse for general-purpose through-hole rectification. When designing with the FR107-G, verify that peak inverse voltage and case temperature stay within the datasheet envelope. The 30 A IFSM rating assumes a single 8.3 ms half-sine pulse; for repetitive surge operation, derate significantly. Use a clip-on heatsink or thermal compound only if your application sustains high average forward current, since the DO-41 body itself dissipates 3 W only with adequate lead cooling. Pair trr with your switching topology: FR107's 500 ns is acceptable for line-frequency and low-frequency SMPS freewheeling, but ultrafast 75 ns parts (UF4007) are required for >100 kHz hard-switched converters. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes sourced from manufacturer datasheets, Mouser/DigiKey listings, and parametric cross-references not consolidated in any single vendor catalog.
FR107-T - 1A 1000V Fast Recovery Rectifier DO-41 | Diodes Incorporated
The Diodes Incorporated FR107-T is a 1.0 A fast recovery rectifier diode rated at 1000 V reverse voltage in an axial-lead DO-41 (DO-204AL) through-hole package. It features a maximum forward voltage of 1.3 V at 1 A, a reverse recovery time on the order of 500 ns, and a UL 94V-0 flammability-rated plastic body, delivering high reliability combined with low leakage and fast switching for high efficiency. A fast recovery rectifier is a discrete semiconductor whose primary function is to convert alternating current (AC) to direct current (DC) in power supply and snubber circuits, while switching quickly enough to minimize reverse-recovery losses. FR107-T sits within the discrete semiconductor taxonomy as: rectifier diode -> fast recovery rectifier -> switching diode -> discrete semiconductor. The "fast" designation means the device reverses polarity in hundreds of nanoseconds rather than microseconds, which suppresses switching transients and EMI in high-frequency rectification. Key features of the FR107-T include a peak repetitive reverse voltage (Vrrm) of 1000 V, an average rectified forward current (Io) of 1.0 A, a forward surge current rating suitable for transformer-rectified rails, and a glass-passivated die construction that yields low reverse leakage over the operating temperature range. The part is rated to operate from -65C to +150C junction temperature. Architecturally, the FR107-T uses a diffused-junction silicon die housed in a void-free molded plastic package with axial leads. The fast recovery characteristic stems from minority carrier lifetime control during the diffusion process, which allows the device to turn off cleanly without the long reverse-recovery tail seen in standard-recovery rectifiers such as the 1N4007. Typical applications for FR107-T include switch-mode power supply (SMPS) output rectifiers, freewheeling diodes across inductive loads, DC-DC converter secondary rectification, and 50/60 Hz line-frequency bridge rectifier stages where low forward drop at 1 A is sufficient. It is also commonly used in inverter and inverter-fed motor drive auxiliary rails. When designing with FR107-T, verify that the switching frequency of the host converter stays below the trr limit. At high di/dt, the reverse-recovery charge Qrr causes additional switching loss and EMI; for hard-switched applications above approximately 100 kHz, an ultrafast (UF) or Schottky alternative typically yields better efficiency. Keep lead length short on the PCB to minimize parasitic inductance and ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single consolidated reference for FR107-T selection and replacement.
FS300R12A6P1B - 1200V 300A IGBT Module | Infineon
The Infineon FS300R12A6P1B is a 1200 V, 300 A three-phase IGBT power module from Infineon's EasyPACK family using the latest IGBT6 / TRENCHSTOP 6 generation technology. It integrates six IGBT switches in a standard three-phase inverter topology with anti-parallel Emitter Controlled 3 diodes and a built-in NTC thermistor for temperature monitoring, all housed in a chassis-mount package rated for 1200 V collector-emitter voltage and 300 A nominal current per switch. An IGBT module (Insulated Gate Bipolar Transistor module) is a high-power semiconductor switch that combines the easy gate-drive of a MOSFET with the low conduction loss of a bipolar transistor, packaged as an integrated three-phase or half-bridge block for industrial inverter applications. IGBTs sit hierarchically under power semiconductors -> discrete semiconductors -> wide-bandgap-adjacent silicon switches, enabling motor drives, solar inverters, and UPS systems at multi-kilowatt power levels. Key features include low VCE(sat) for reduced conduction loss, integrated NTC for direct junction-temperature feedback to the DSP/MCU, TVj op = 150 degrees C high-temperature operation, and a press-fit / screw-mount mechanical interface for industrial chassis assembly. The module's 1200 V blocking voltage supports DC-link buses up to 800 V nominal (per typical 600 V / 690 V AC mains with 1.4x derating headroom), and 300 A continuous current delivers three-phase output in the 100-200 kW range for general-purpose drives. The IGBT6 (TRENCHSTOP 6) cell architecture uses micro-pattern trench field-stop technology with thin-wafer processing, achieving a tighter VCE(sat)/Eoff tradeoff than the previous IGBT4 generation. The integrated emitter-controlled 3 diode delivers low reverse-recovery loss, while the on-chip NTC thermistor enables precise thermal derating in variable-frequency drive firmware. Typical applications include industrial variable-frequency drives for three-phase motors, three-phase solar string inverters, uninterruptible power supplies, and industrial servo drives where the module handles 100-250 kW output stages. The 1200 V class also supports battery chargers and high-power welding equipment. The integrated NTC simplifies inverter thermal management firmware compared to discrete IGBT designs. When designing with the FS300R12A6P1B, mount the module to a heatsink or cold plate with proper thermal interface material, keep the DC-link capacitor loop area minimal to suppress switching transients, and use isolated gate drivers with reinforced isolation per IEC 61800-5-1. Maintain VCE breakdown derating - the 1200 V rating requires careful snubber design at DC-link voltages above 800 V.
FS35R12W1T4 - 1200V 35A EasyPACK 1B IGBT Module | Infineon
The Infineon FS35R12W1T4 is a 1200 V, 35 A six-pack IGBT power module in the EasyPACK 1B package, integrating TRENCHSTOP IGBT4 emitter-controlled 4 diodes, and an NTC thermistor for temperature monitoring. The six-pack topology delivers three half-bridge legs in a single module with low-inductance layout and PressFIT-compatible power terminals, simplifying three-phase inverter designs up to about 25 kW switching at 8-16 kHz. An IGBT module is a hybrid power semiconductor assembly that combines insulated-gate bipolar transistors with co-packaged freewheeling diodes in an isolated, baseplate-less housing. It belongs to the power module family within discrete semiconductors, sitting above discrete IGBTs and below integrated power stacks (IPMs) in the power-conversion hierarchy. Six-pack modules are the workhorse building block of three-phase variable-frequency drives, servo amplifiers, and solar string inverters. Key features of the FS35R12W1T4 include a 1200 V collector-emmitter blocking voltage (VCE), 35 A nominal collector current per switch, TRENCHSTOP IGBT4 trench/field-stop technology for low VCE(sat) and soft switching, an integrated NTC for overtemperature protection, and an operating junction range from -40 C to +150 C. The EasyPACK 1B housing is baseplate-less and uses screw-mount power terminals, enabling compact liquid-cooled or forced-air designs. The IGBT4 die is optimized for hard-switching topologies up to roughly 16 kHz, with low switching losses and a robust short-circuit ruggedness of 10 us. The integrated EC4 diodes use the latest emitter-controlled generation for reduced reverse-recovery losses, which directly improves inverter efficiency at higher switching frequencies. Typical applications include three-phase motor drives for industrial pumps, fans, and servo amplifiers, as well as solar string inverters, UPS systems, and welding power supplies. The press-fit variant FS35R12W1T4_B11 shares the same electrical die and offers solder-free assembly for high-volume manufacturing. When designing with this module, ensure the DC-link bus bar layout maintains loop inductance below 30 nH to keep voltage overshoot within the 1200 V rating. Always read the integrated NTC through an isolated amplifier and de-rate the module above 90 C case temperature per the datasheet thermal curves. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
FS35R12W1T4-T7 - 1200V 35A EasyPACK 1B IGBT Module | Infineon
The Infineon FS35R12W1T4-T7 is a 1200 V, 35 A sixpack IGBT power module from the EasyPACK 1B family, integrating TRENCHSTOP IGBT4 switches with Emitter Controlled 4 diodes and an on-board NTC thermistor for temperature monitoring. The module is delivered with T7 chip technology designation and uses solder contact technology in a chassis-mount form factor. An IGBT module is a power-semiconductor building block that combines multiple insulated-gate bipolar transistors and freewheeling diodes in a single isolated package, enabling compact three-phase inverter, rectifier, or chopper designs. Within the broader power-electronics taxonomy, the IGBT sits between MOSFETs (faster, lower voltage) and thyristors (higher power, slower), and is the workhorse device for medium-power motor drives, solar inverters, and UPS systems operating from a few kW to over 100 kW. Key specifications include a collector-emitter voltage rating of 1200 V, a nominal collector current of 35 A (with 65 A pulsed capability per datasheet), a sixpack (three-phase full-bridge) topology, and an integrated brake chopper IGBT/diode pair. The module is part of the EasyPACK 1B family, sharing the same mechanical footprint and pin-out with related EasyPACK devices, which simplifies PCB and heatsink design across product variants. The TRENCHSTOP IGBT4 chip technology combines a trench gate cell with a field-stop layer, achieving low VCE(sat) and reduced switching losses compared to previous-generation NPT IGBTs. The Emitter Controlled 4 diode co-packaged with each switch reduces reverse-recovery losses and improves EMC. An NTC thermistor embedded in the module substrate allows real-time junction-temperature monitoring for thermal protection. Typical applications include low-to-medium power industrial motor drives, servo amplifiers, solar string inverters, UPS systems, and welding equipment. The 1200 V class makes it suitable for 400 V / 480 V AC bus systems and 600 V / 800 V DC-link applications. The EasyPACK 1B platform also enables paralleling multiple modules for higher current. When designing with the FS35R12W1T4-T7, ensure proper thermal management: the module dissipates significant power (over 200 W possible) and requires a thermal interface material, a suitable heatsink, and often forced-air cooling. Gate-driver design must respect the IGBT4 short-circuit ruggedness and provide sufficient negative gate-emitter voltage during turn-off to prevent spurious turn-on caused by the Miller effect. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, helping engineers evaluate sourcing options and second-source strategies.
FZT849TA - 30V 7A NPN BJT, 100MHz, SOT-223 | Diodes Incorporated
The Diodes Incorporated FZT849TA is a 30V NPN silicon planar medium-power bipolar junction transistor rated for 7A continuous collector current and 20A peak pulse current, housed in a SOT-223 surface-mount package with a collector-tab thermal pad. It features a transition frequency of 100 MHz, a power dissipation of 3 W at 25 °C ambient on the recommended copper pad, and an extremely low equivalent on-resistance RCE(sat) of 36 mΩ at 5A. A bipolar junction transistor (BJT) is a three-terminal semiconductor device formed by sandwiching either P-type or N-type material between two layers of the opposite polarity, creating either NPN or PNP polarity. BJTs use a small base current to control a much larger collector current, acting as a current amplifier or a saturated switch. The FZT849TA belongs to the NPN variant and is engineered for medium-power switching and linear applications where a saturated high-side or low-side switch must deliver several amps with low conduction loss. Key features include a VCBO of 60V, VCER of 40V, low VCE(sat) of 250 mV typical at 6.5 A, complementary PNP partner FZT949, and a built-in collector-tab that simplifies PCB heatsinking. The device is lead-free, RoHS compliant, halogen-free, and qualified to AEC-Q101 for automotive power-management and lighting loads. Architecturally, the FZT849TA uses a planar epitaxial base design with a high-current die capable of sustaining 20A pulsed for inductive-load switching. The SOT-223 footprint exposes the collector through the rear tab, reducing thermal resistance from junction to ambient (θJA) to roughly 76 °C/W on the datasheet's reference copper pad, allowing multi-watt dissipation without a discrete heatsink. Typical applications include DC-DC converter pass elements, motor driver low-side switches, automotive relay replacement, solenoid drivers, LED current regulators, and battery-protection circuits. The combination of high ICM and low VCE(sat) makes it especially suited for portable and automotive load management where efficiency and thermal performance dominate the BOM. When designing with this device, derate power dissipation against ambient temperature using the θJA figure from the datasheet. Drive the base with sufficient base current to force saturation—roughly IC/10—and include a base-emitter resistor to guarantee fast turn-off in PWM applications. This page consolidates distributor stock, parametric comparisons, drop-in alternatives, and PCB thermal guidance not found in the bare manufacturer datasheet.
GAN063-650WSAQ - 650V 50mΩ GaN FET, TO-247-3 | Nexperia
Nexperia GAN063-650WSAQ is a 650 V, 50 mΩ Gallium Nitride (GaN) power transistor housed in a TO-247-3 through-hole package. It is qualified to AEC-Q101, combines a high-voltage GaN HEMT with a low-voltage silicon MOSFET in a cascode configuration, and is rated for 34.5 A continuous drain current (Tc) with 143 W power dissipation. What is a GaN FET? A Gallium Nitride Field-Effect Transistor is a wide-bandgap power semiconductor that switches faster and with lower switching losses than equivalent silicon MOSFETs. GaN belongs to the hypernym hierarchy: GaN FET -> wide-bandgap semiconductor -> power transistor -> discrete semiconductor. Compared with silicon superjunction MOSFETs of similar voltage class, GaN devices offer lower on-resistance per unit area, near-zero reverse-recovery charge (Qrr), and smaller output capacitance energy (Eoss), enabling smaller magnetics and higher system efficiency in hard-switched topologies. The GAN063-650WSAQ is a normally-off cascode GaN FET that integrates a low-voltage silicon MOSFET with a high-voltage GaN HEMT to deliver a standard MOSFET gate-drive experience. Key features include a 650 V drain-source blocking voltage, 50 mΩ typical on-resistance, low gate charge for fast switching transitions, and zero Qrr which eliminates body-diode reverse-recovery losses in half-bridge configurations. The TO-247-3 package provides a robust mechanical form-factor familiar to power designers and supports screw-mount thermal attachment to a heatsink. Technically, the cascode configuration means the device is driven by a standard 0-10 V or 0-12 V gate signal like a silicon MOSFET, but the drain-current conduction and blocking are performed by the GaN HEMT, giving engineers a drop-in upgrade path from silicon MOSFETs to GaN. AEC-Q101 qualification makes the part suitable for automotive-grade designs including on-board chargers and DC-DC converters for electric vehicles. Typical applications include electric vehicle on-board chargers (OBC), totem-pole PFC converters, telecom rectifier stages, industrial SMPS, solar micro-inverters, and high-density server power supplies. The combination of 650 V rating and 50 mΩ RDS(on) targets sub-3 kW power conversion stages where efficiency above 98% is required. Design consideration: drive the GAN063-650WSAQ with a totem-pole capable gate driver that can source/sink at least 1 A peak gate current, keep the gate-loop PCB inductance below 5 nH, and place a small ferrite bead or RC snubber on the source return to suppress the high dV/dt-induced ringing that GaN devices generate. The AEC-Q101 'Q' suffix also implies PPAP documentation and tighter process control than the standard-grade GAN063-650WSA.
GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia
The Nexperia GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) power FET in a TO-247 through-hole package, combining Nexperia's high-voltage GaN HEMT H2 technology with low-voltage silicon MOSFET technologies in a normally-off cascode configuration. It delivers a 21 A continuous drain current (at Ta) and 107 W power dissipation (at Ta), enabling superior switching performance in high-density power conversion. A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power transistor that operates as a higher-frequency, higher-efficiency successor to the silicon MOSFET in the power semiconductor hierarchy. Within the taxonomy GaN FET -> HEMT -> power transistor -> discrete semiconductor -> power management, GaN devices deliver lower on-resistance per unit area, faster switching edges, smaller magnetic components, and reduced conduction/switching losses compared with silicon superjunction MOSFETs at the same voltage rating. Key features of the GAN111-650WSB include 650 V drain-source blocking voltage, 97 mΩ typical on-resistance (RDS(on)), and a normally-off architecture that simplifies gate drive and failsafe behavior. The TO-247 package offers industry-standard through-hole mounting with robust thermal performance for high-current applications. The cascode H2 HEMT topology provides a hardened gate that withstands standard silicon MOSFET gate-drive levels. Typical applications include high-efficiency AC-DC and DC-DC converters, server and telecom switch-mode power supplies (SMPS), photovoltaic microinverters and string inverters, on-board chargers (OBC) for electric vehicles, and industrial motor drives. The 650 V rating also makes it suitable for three-phase PFC front ends and totem-pole bridgeless PFC topologies. When designing with this device, ensure the gate driver can supply sufficient pull-down current to handle high dv/dt transitions, and place the gate-source loop as small as possible to minimize ringing. Compared with silicon superjunction MOSFETs of similar RDS(on), the GAN111-650WSB delivers substantially lower switching losses and supports higher switching frequencies, reducing magnetic component size. This page synthesizes Nexperia datasheet parameters, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
GAN111-650WSBQ - 650V 97mOhm GaN FET TO-247 | Nexperia
The Nexperia GAN111-650WSBQ is a normally-off (enhancement-mode) N-channel Gallium Nitride (GaN) FET rated at 650 V drain-source voltage with an on-state resistance of 97 mOhm, capable of 21 A continuous drain current (at Ta) and 107 W power dissipation in a through-hole TO-247-3L (SOT429) package. A GaN FET is a power transistor built on gallium nitride, a wide-bandgap (WBG) semiconductor with a bandgap of roughly 3.4 eV versus 1.1 eV for silicon. Within the power-semiconductor hierarchy (transistor -> FET -> wide-bandgap power transistor -> GaN HEMT), GaN devices switch faster and with lower switching losses than silicon MOSFETs or IGBTs, enabling higher-frequency power conversion with smaller magnetics. The GAN111-650WSBQ combines Nexperia's high-voltage GaN HEMT H2 technology with an integrated low-voltage silicon MOSFET in a cascode configuration. The cascode stack delivers a true normally-off gate behavior, allowing the device to be driven with a conventional gate drive voltage of 10 V like a standard silicon MOSFET, simplifying gate-driver selection compared with direct-drive e-mode GaN parts. Key differentiating specifications include the 97 mOhm RDS(on) figure of merit, the 650 V avalanche-classed drain rating, a wide operating temperature range of -55 C to +175 C, and the rugged TO-247 through-hole package that simplifies thermal design and prototyping compared with SMD GaN packages. Typical applications include high-efficiency switched-mode power supplies (SMPS), totem-pole bridgeless power factor correction (PFC) stages, LLC resonant converters, solar / renewable-energy inverters, and servo or industrial motor-drive front ends where high-frequency, high-voltage switching directly reduces converter size and loss. When designing with this device, minimize gate-loop and power-loop inductance, and provide a negative or zero-voltage gate turn-off to suppress dv/dt-induced turn-on; verify board layout against the manufacturer datasheet layout guidance for high-frequency GaN switching. This page synthesizes distributor pricing, verified drop-in alternatives, pinout data, and practical GaN-specific design notes not consolidated on the manufacturer product page alone.
GB02SHT03-46 - 300V 4A SiC Schottky Diode | GeneSiC TO-46
The GeneSiC GB02SHT03-46 is a 300 V, 4 A Silicon Carbide (SiC) Power Schottky Diode in a 2-pin through-hole TO-46 package, designed for high-temperature, high-frequency, and high-efficiency power conversion. It features a repetitive peak reverse voltage of 300 V, a continuous forward current rating of 4 A, and is part of GeneSiC's High-Temperature SiC Schottky Diode family intended for operation in harsh environments where conventional silicon rectifiers would suffer excessive leakage and thermal runaway. A Schottky diode is a unipolar semiconductor device formed by a metal-semiconductor junction rather than a PN junction. Compared to silicon PN-junction rectifiers, SiC Schottky diodes offer near-zero reverse recovery charge, much higher blocking voltage per unit area, and the ability to operate at junction temperatures above 200 C. The device family hierarchy is: SiC Schottky Diode -> Schottky Diode -> Rectifier Diode -> Discrete Semiconductor -> Power Semiconductor. This taxonomy explains why SiC Schottky parts are positioned as premium alternatives to ultrafast silicon rectifiers in switch-mode power supplies. Key features of the GB02SHT03-46 include a low forward voltage drop (typical values around 1.5 V at rated current), negligible reverse recovery, and a hermetic TO-46 metal can package that supports high-temperature operation. The SiC die technology eliminates the reverse-recovery charge that plagues silicon ultrafast rectifiers, allowing much higher switching frequencies (typically 100 kHz to 1 MHz) and reducing switching losses in continuous-conductor PFC, LLC resonant, and buck/boost converters. From a technical-depth perspective, the SiC junction barrier Schottky (JBS) architecture merges a low-barrier Schottky contact with a PN-grid edge termination. This design minimizes leakage current at high reverse bias while preserving the low Vf of a pure Schottky structure, allowing the GB02SHT03-46 to deliver 300 V blocking at 4 A continuous forward current in a package the size of a small signal BJT. Typical applications include high-frequency switch-mode power supplies (SMPS), solar PV inverters, EV onboard chargers, industrial motor drives, freewheeling diodes for IGBT/SiC MOSFET half-bridges, and high-temperature down-hole or aerospace power electronics. Its TO-46 package is through-hole and easy to integrate into leaded assemblies where surface-mount SiC die would otherwise require DBC substrates. When designing with this part, ensure adequate heatsinking at currents near the 4 A rating, since SiC Schottky diodes dissipate significant conduction power (P = Vf x If). For switching applications, minimize loop inductance to fully exploit the zero-reverse-recovery advantage. This page synthesizes distributor pricing, package details, drop-in same-package alternatives, and engineering design notes for the GB02SHT03-46 - information beyond what is available on individual distributor listings.
GBPC2510W-E4/51 - 25A 1000V GBPC-W Bridge Rectifier | Vishay
The Vishay General Semiconductor GBPC2510W-E4/51 is a 25 A, 1000 V single-phase glass-passivated bridge rectifier housed in the industry-standard 4-pin GBPC-W (Wire Lead) through-hole module package. It integrates four high-current diodes in a full-bridge configuration designed for printed-circuit-board mounting with wire leads, providing 1 kV peak reverse voltage and 25 A average rectified forward current per device with high surge current capability for demanding AC-to-DC rectification. A bridge rectifier is a discrete semiconductor building block that converts full-wave AC input into DC output by steering current through four diodes arranged in a Graetz bridge; it is a sub-category of power diodes that sits hierarchically above single rectifiers and below complete AC/DC power-supply front ends. The GBPC family from Vishay is one of the most widely second-sourced rectifier footprints in the industry, making this part a common reference point for SMPS, motor drive, and appliance power designs. Key features of the GBPC2510W-E4/51 include a low forward voltage drop of 1.1 V per diode at full rated current, a typical reverse leakage current below 0.3 µA, silver-plated wire leads that are solderable per J-STD-002 and JESD22-B102, and a UL94V-0 flammability-rated case. Solder-dip capability to 275 °C maximum for 10 seconds per JESD22-B106 simplifies wave-solder assembly, and the part carries UL recognition under file number E54214, easing safety agency submission for end equipment. The construction uses a glass-passivated silicon junction for stable leakage and long-term reliability, with a low thermal-resistance path from junction to lead for heatsink mounting. The GBPC-W package is mechanically and electrically compatible with the GBPC, GBPCW, and WTE bridge-rectifier footprints from multiple suppliers, simplifying sourcing. Typical applications include AC/DC full-wave rectification in switch-mode power supplies, industrial motor drives, uninterruptible power supplies (UPS), battery chargers, welding equipment, home appliances such as washing machines and microwave ovens, and office equipment including printers and copiers. The 1 kV Vrrm provides substantial margin on 220-240 Vrms rectified rails, allowing operation in single-phase and three-phase input designs. Design considerations include mandatory heatsinking to keep the junction below the rated temperature, observance of the IFSM surge rating for inrush, and provision of a fuse or PTC for short-circuit protection. Verify the wire-lead bending radius against the mechanical drawing to avoid glass-passivation cracking during assembly. This page synthesizes distributor pricing, drop-in compatible alternatives, and practical bridge-rectifier design notes not found on the manufacturer datasheet.
GDZJ30B - 30V 500mW Zener Diode DO-34 | Pan Jit
The Pan Jit International Inc. GDZJ30B is a 30 V nominal Zener diode in an axial-lead DO-34 glass package with 500 mW power dissipation and ±3% voltage tolerance. It belongs to the GDZJ series of planar-die construction Zener diodes designed for automated assembly processes, with solderable terminals qualified per MIL-STD-202 Method 208. A Zener diode is a specialized silicon p-n junction diode engineered to operate stably in the reverse-breakdown (Zener) region, where it maintains a nearly constant voltage across a wide range of reverse currents. In circuit topology, Zener diodes belong to the discrete semiconductor family and function as primitive voltage references, voltage clamps, or simple shunt regulators. They are the lowest-cost implementation of a fixed reference and are widely used for secondary regulation, overvoltage protection, and signal limiting. Key features of the GDZJ30B include a nominal Zener voltage (Vz) of 30 V at the standard test current (Iz), 500 mW maximum power dissipation at 25 °C ambient (derated linearly above this temperature), and a planar die construction that delivers predictable Zener voltage characteristics and low leakage. The DO-34 molded glass envelope provides hermetic sealing and is approximately 0.012 g per piece, making it suitable for high-density through-hole designs. Lead polarity is indicated on the body per the manufacturer diagram. From an electrical perspective, the GDZJ30B exhibits a Zener impedance (Zzt) and reverse leakage current (Ir) consistent with the planar process technology. The 30 V nominal sits in the mid-range of the GDZJ series and is typically selected when a precision reference around 30 V is required for analog signal conditioning, instrumentation supply rails, or as a bias-voltage source for transistor circuits. Typical applications include voltage reference for analog front-end circuits, overvoltage protection for instrumentation inputs, and as a simple shunt regulator in industrial control and test & measurement equipment. Because of its DO-34 through-hole package, it is most commonly used in legacy through-hole PCB designs, prototyping, and repair/replacement scenarios rather than new high-density SMT boards. When designing with the GDZJ30B, observe the 500 mW power dissipation ceiling and apply proper derating above 25 °C. Mount leads with strain relief to prevent glass-body fracture, and respect the reverse-leakage behavior when used as a precision source at low currents. This page synthesizes verified distributor pricing, drop-in alternatives within the GDZJ series, and practical design notes not consolidated on a single manufacturer datasheet.
GS0650182LTRXUMA1 - 650V 18A GaN Power Transistor | Infineon
The Infineon GS0650182LTRXUMA1 is an N-channel 650V Gallium Nitride (GaN) power transistor rated for 18A continuous drain current (Tc), housed in an 8-PDFN (8x8 mm) surface-mount package with an on-resistance of 0.11 ohm and a total gate charge of 4 nC per the verified Farnell distributor listing. Marketed under the Legacy Gan Systems product line following Infineon's acquisition of GaN Systems, this enhancement-mode HEMT delivers low conduction and switching losses for high-frequency, high-efficiency power conversion. A Gallium Nitride (GaN) transistor is a wide-bandgap semiconductor power switch that sits in the hierarchy: GaN FET -> HEMT (High Electron Mobility Transistor) -> power transistor -> discrete semiconductor. Compared with conventional silicon MOSFETs, GaN HEMTs offer dramatically lower gate charge, lower output capacitance, zero reverse recovery charge, and higher switching frequency capability. These traits make GaN transistors the preferred choice for next-generation AC/DC, DC/DC, and totem-pole PFC power stages where efficiency, power density, and thermal performance are paramount. Key features of the GS0650182LTRXUMA1 include the 650V drain-source blocking voltage, 18A continuous drain current at case temperature, 0.11 ohm on-resistance, and a low 4 nC gate charge enabling high-frequency switching. The normally-off enhancement-mode gate structure provides intrinsic safety and simplifies gate drive design versus cascode or depletion-mode GaN devices. The PDFN-8 (8x8 mm) package provides an exposed thermal pad for low thermal resistance and is footprint-compatible with industry-standard GaN land patterns. At the architecture level, this GaN HEMT uses a silicon-substrate GaN-on-Si epitaxial process, which integrates the high-electron-mobility AlGaN/GaN heterostructure onto a standard silicon wafer. The 2DEG (two-dimensional electron gas) channel yields electron mobility roughly an order of magnitude higher than silicon, which translates directly into the device's low RDS(on) x Qg figure-of-merit. The result is a switch that can operate efficiently at frequencies well above what silicon MOSFETs achieve. Typical applications include totem-pole bridgeless PFC converters for server and telecom AC/DC front ends, high-frequency LLC and quasi-resonant DC/DC stages in industrial SMPS, photovoltaic microinverters and string inverters, on-board chargers for electric vehicles, and Class-D audio amplifiers where low dead-time losses matter. Designers choose GaN over SiC or silicon MOSFETs when the priority is highest switching frequency, smallest magnetic components, and best efficiency at partial loads. When designing with this part, observe the absolute maximum VDS of 650V and ensure adequate margin below that value during transient ringing on the switching node. Use a gate drive voltage of typically 6V with a recommended negative turn-off bias to prevent false triggering from Miller coupling, and keep the high-current loop area minimal on the PCB to limit parasitic inductance. The exposed pad must be soldered to a sufficient copper pour - typically 1 square inch or more - to dissipate the conduction losses at full load. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers shorten the selection and qualification cycle for 650V GaN power stages.
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
The Infineon IAUA120N04S5N014AUMA1 is a 40 V N-channel OptiMOS™ 5 power MOSFET housed in a surface-mount PG-HSOF-5-2 (sTOLL) package with 1.4 mΩ maximum R<sub>DS(on)</sub> and 120 A continuous drain current, qualified to AEC-Q101 for automotive use. The device integrates an exposed-drain tab that doubles as both electrical contact and primary thermal path, enabling compact footprint designs with low thermal resistance. An N-channel power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a voltage-controlled device in which a positive gate-to-source voltage creates a conducting channel between drain and source, enabling high-current switching or low-loss linear regulation. Within the broader semiconductor hierarchy it belongs to the discrete transistor family, sits beneath Insulated-Gate Bipolar Transistors (IGBTs) for sub-600 V applications, and above RF MOSFETs and small-signal FETs; it is the workhorse of synchronous rectification, motor drive, and high-current load switching. The IAUA120N04S5N014AUMA1 is part of Infineon's OptiMOS™ 5 40 V family that targets automotive 12 V and 24 V board nets. Key features include an extremely low on-state resistance of 1.4 mΩ maximum at V<sub>GS</sub>=10 V, a logic-level-compatible gate threshold range suitable for direct microcontroller drive, and 100% avalanche-tested ruggedness. The sTOLL package's source-down clip-mount construction gives a junction-to-case thermal resistance compatible with 136 W power dissipation on properly designed PCBs. Architecturally, the device uses Infineon's advanced OptiMOS™ 5 trench cell structure that minimizes both R<sub>DS(on)</sub> × Q<sub>g</sub> and R<sub>DS(on)</sub> × Q<sub>oss</sub> figure-of-merits, which directly translates to lower conduction loss and reduced switching loss. This makes it ideal for high-frequency synchronous buck converters and OR-ing circuits that cycle at 100 kHz to 1 MHz. Typical applications include automotive 12 V and 24 V brushless DC (BLDC) motor drives, electronic power steering (EPS), electric water/oil pumps, body-control modules, high-current DC-DC converters, and battery protection circuits. Its automotive-grade reliability also suits industrial high-current switching. When designing with this device, ensure the PCB land pattern uses the recommended sTOLL footprint with sufficient copper area on the drain tab to keep junction temperature within safe limits; a 1 oz copper pour of at least 1 cm² is recommended for full 100 A+ operation.
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUA180N04S5N012AUMA1 is an N-channel 40 V power MOSFET from the OptiMOS-5 40 V family, delivering 180 A continuous drain current and 125 W power dissipation in a compact PG-HSOF-5-2 (sTOLL) surface-mount package. It is specified at 40 V VDS, with a typical R_DS(on) of 1.2 mΩ at 10 V VGS, and is qualified to AEC-Q101 for automotive use. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or switch current in power-conversion circuits. Power MOSFETs sit in the broader semiconductor taxonomy as discrete transistors -> FETs -> MOSFETs -> power MOSFETs. The 40 V class is commonly used in 12 V automotive subsystems where load-dump transients can drive rails up to 35-40 V, requiring headroom beyond the nominal bus voltage. Key features include the OptiMOS-5 trench technology that minimises R_DS(on) x Qg figure-of-merit, a low 1.2 mΩ on-resistance that reduces conduction losses, and a 56 mm² footprint (7x8 mm² sTOLL) that is smaller than the legacy DPAK (65 mm²). The device is qualified to AEC-Q101, supports 100% R_g-tested avalanche, and integrates a monolithic body diode for hard-switching topologies. The sTOLL (MO-319A / IEC HSOF-5) leadless package provides a top-side thermal pad for low thermal resistance and excellent solder-joint reliability, while the 5-pin layout enables source-sense and gate-drive Kelvin connections. The low FOM allows high-frequency switching up to several hundred kHz in synchronous-rectifier and ORing applications. Typical applications include 12 V automotive electric power steering (EPS), brushless DC motor drives, battery disconnect switches, eFuse and high-side load switches, and 48 V -> 12 V DC-DC converters. The high inrush capability also makes it suitable for hot-plug and reverse-battery protection circuits. When designing with this device, prioritise Kelvin-source connection to the gate driver to suppress common-source inductance, and use a TVS clamp on the gate to limit VGS below ±20 V. Thermal design should assume worst-case R_DS(on) at hot Tj and apply sufficient PCB copper or an external heat spreader. This page synthesises distributor pricing, drop-in alternatives, and practical design notes for IAUA180N04S5N012AUMA1 not found in the manufacturer datasheet, optimised for engineers evaluating Infineon OptiMOS-5 40 V parts for automotive power designs.
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
The Infineon IAUA210N10S5N024AUMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 100 V drain-source breakdown, 2.4 mΩ maximum on-resistance (RDS(on)) at VGS=10 V, and 210 A continuous drain current (Tj), dissipating up to 238 W (Tc) in a surface-mount PG-HSOF-5-4 (7×8 mm² sTOLL) package. It is AEC-Q101 qualified for automotive applications and specifically designed for 48 V HVAC systems, BLDC motor drives, and high-current DC-DC converter power stages. What is an automotive-grade N-channel MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled switch used to efficiently route and regulate power in electronic systems. An N-channel MOSFET conducts when a positive gate-source voltage exceeds its threshold; the OptiMOS 5 family from Infineon is the company's fifth-generation 100-200 V trench MOSFET platform, optimized for ultra-low RDS(on) per unit silicon area. In the broader taxonomy, it belongs to: power MOSFET -> discrete semiconductor -> power management component -> semiconductor device. Automotive-grade (AEC-Q101) variants are individually screened for temperature, vibration, and reliability stress demanded by 12 V, 24 V, and 48 V vehicle electrical systems. Key differentiating specifications include a typical gate charge (Qg) tuned for low switching losses at high frequencies, an avalanche-rated single-pulse body diode, and a kelvin-source pin configuration in the PG-HSOF-5-4 package that separates the gate-drive return from the high-current source path. This decoupling reduces source-inductance ringing and improves switching performance in hard-switched topologies. The 100 V VDS rating provides substantial headroom above the 48 V automotive bus maximum, while the 2.4 mΩ RDS(on) minimizes conduction losses at high current, making the device well suited for high-power-density designs where PCB real estate is constrained. Typical applications span automotive 48 V HVAC blowers and pumps, electronic power steering (EPS), brushless DC motor drive half-bridges, isolated DC-DC converter primary-side switches, hot-swap and OR-ing controllers in server/industrial 48 V rails, and high-current synchronous rectification stages. The AEC-Q101 qualification also makes the part attractive for off-road, agricultural, and construction vehicle electronics where environmental robustness is critical. When designing with this device, attention to PCB layout, gate-drive loop inductance, and thermal management is essential. The exposed pad of the PG-HSOF-5-4 package must be soldered to a sufficiently large copper pour, and a low-inductance gate-drive return is required to realize the device's rated switching performance. Designers should also verify SOA at the intended DC-link voltage and continuous current, since the 210 A rating is junction-temperature limited and derates significantly with case temperature. This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical thermal/SOA design notes not consolidated in the manufacturer datasheet.
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUA220N08S5N021AUMA1 is an 80 V N-channel power MOSFET from the OptiMOS-5 75V-120V automotive platform, rated for 220 A continuous drain current (Tj) and 211 W power dissipation (Tc), housed in a surface-mount PG-HSOF-5-4 package measuring 7x8 mm². It features an ultra-low R_DS(on) of 2.1 mΩ, automotive-grade qualification per AEC-Q101, and is optimized for high-current switching in 12 V and 24 V automotive electrical systems. The S5 generation silicon delivers substantial conduction-loss reduction versus legacy OptiMOS-3 parts. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field on the gate insulator to modulate the conductivity of the semiconductor channel between source and drain. Within the broader taxonomy, N-channel MOSFETs sit inside the power-MOSFET family, which in turn belongs to discrete semiconductors, and specifically to the automotive-grade OptiMOS-5 product line. The 'N-channel' designation means the majority carriers are electrons, yielding lower on-resistance per unit silicon area than equivalent P-channel parts. In switching converter, motor drive, and load-switch topologies, the MOSFET acts as the synchronous rectifier or high-side/low-side switch. Key electrical specifications include a maximum drain-to-source voltage V_DS of 80 V, a continuous drain current of 220 A (Tj-rated), pulsed avalanche capability, gate threshold voltage V_GS(th) typically around 2-3 V, and an R_DS(on) of 2.1 mΩ at 10 V V_GS. The OptiMOS-5 technology improves figure-of-merit (R_DS(on) × Q_g) by 30% versus the prior generation. The PG-HSOF-5-4 package provides an exposed source-pad thermal interface enabling direct PCB heat-sinking through copper pours, with a low thermal resistance path to the heatsink. Typical applications span automotive 48 V mild-hybrid auxiliary drives, electric power steering (EPS), brake-by-wire systems, LED headlamp power stages, HVAC blower motor drives, e-mobility controllers, and high-current DC-DC converters. The AEC-Q101 qualification and 175 °C maximum junction temperature ensure reliability under automotive underhood thermal cycling. The 80 V V_DS rating provides ample margin over 12 V/24 V battery transients (load-dump pulses up to ~35 V for 12 V systems, ~58 V for 24 V systems). When designing with this MOSFET, place the gate driver within 5 mm of the gate pin to minimize parasitic loop inductance. Use a 10 Ω gate resistor to dampen ringing. Provide a thermal copper-pour area of at least 100 mm² on the source pad to achieve the rated 211 W Tc dissipation. Verify V_GS never exceeds the ±20 V absolute maximum during switching transients to avoid gate-oxide failure.
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC100N04S6L014ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 6 process technology, delivering 100 A continuous drain current (Tc) and 1.4 mOhm maximum R<sub>DS(on)</sub> in a 5x6 mm PG-TDSON-8 (SuperSO8) leadless surface-mount package. It is qualified to AEC-Q101 for automotive applications and is part of Infineon's IAUC automotive MOSFET family. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or modulate current in power-conversion circuits. As an N-channel enhancement-mode device, the IAUC100N04S6L014 turns on when V<sub>GS</sub> exceeds the threshold, conducting current from drain to source with very low conduction loss. In the broader taxonomy, this part belongs to: power MOSFET -> discrete semiconductor -> power management component -> semiconductor device. Key features include 40 V drain-source breakdown voltage (V<sub>DS</sub>), 100 A continuous drain current at case temperature, 1.4 mOhm maximum on-resistance (R<sub>DS(on)</sub>) at V<sub>GS</sub>=10 V, low gate charge Q<sub>G</sub> typical of OptiMOS 6, and 100 W maximum power dissipation. The SuperSO8 5x6 mm footprint offers an excellent thermal path via the exposed pad while keeping board area compact, making it ideal for high-current 12 V automotive systems where PCB real estate is constrained. The OptiMOS 6 40 V process delivers a strong figure of merit (FOM = R<sub>DS(on)</sub> x Q<sub>G</sub>), minimizing switching and conduction losses simultaneously. Compared to the previous OptiMOS 5 generation, the 6th-generation die shrinks on-resistance per unit area, improving both thermal performance and efficiency in high-frequency switching applications. The robust avalanche-rated body diode and dv/dt ruggedness further support hard-switched topologies. Typical applications include 12 V automotive ECU power switching, electric power steering (EPS), braking systems, body control modules, high-current DC-DC converters, and battery management system (BMS) protection. The 40 V rating also makes it well suited to industrial 24 V bus switching where transient headroom is required. When designing with this MOSFET, observe safe operating area (SOA) limits at high V<sub>DS</sub> and I<sub>D</sub> combinations and ensure the gate drive voltage reaches at least 10 V for full enhancement. Drive strength and gate-loop inductance should be minimized to control switching losses and ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the IAUC100N04S6L014ATMA1 not found in the manufacturer datasheet alone, helping engineers shorten component selection and qualification cycles.
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
The Infineon IAUC100N04S6L020ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 6 40V technology, housed in a 5x6 mm SS08 (PG-TDSON-8) leadless surface-mount package. It delivers 100 A continuous drain current (Tc) and 75 W power dissipation (Tc) with an ultra-low R<sub>DS(on)</sub> typical of 2.0 mΩ at V<sub>GS</sub>=10 V, making it one of the lowest-on-resistance 40 V MOSFETs in this footprint. The device is qualified for automotive applications and ships in Tape & Reel packaging (TMA1 suffix). A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used in switching power conversion, motor drive, and load management. The IAUC100N04S6L020 belongs to the OptiMOS 6 family, which sits in the discrete-semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> semiconductor device. The N-channel variant requires a positive gate-source voltage to conduct and is the dominant choice for low-side switching, high-current synchronous rectification, and OR-ing applications. Key features of the IAUC100N04S6L020 include a 40 V drain-source breakdown voltage (V<sub>(BR)DSS</sub>) suitable for 12 V and 24 V automotive rails, a maximum R<sub>DS(on)</sub> of 2.04 mΩ at V<sub>GS</sub>=10 V and I<sub>D</sub>=50 A, low gate charge Q<sub>G</sub> for high-frequency switching, and an operating junction temperature range of -55 °C to +175 °C. The leadless SS08 (PG-TDSON-8) package offers a top-side cooling thermal pad that drastically reduces thermal resistance compared with DPAK, allowing 75 W dissipation on a standard JEDEC 1s0p PCB footprint. The OptiMOS 6 platform improves switching figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) over earlier OptiMOS generations, reducing both conduction and switching losses in 40 V automotive systems. The 2 mΩ on-resistance at 100 A means the device dissipates only ~20 W at full rated current, a value that would have required a much larger TO-220 part a decade ago. Typical applications for this part include 12 V/24 V automotive ECU power switching, electric power steering (EPS) and braking system MOSFETs, BLDC motor drive half-bridges, high-current DC-DC converter synchronous rectifiers, battery management system (BMS) protection switches, and USB-PD / e-fuse load switches. The combination of automotive-grade qualification and SS08 footprint makes it a drop-in upgrade for older OptiMOS 5 designs. When designing with the IAUC100N04S6L020, ensure the gate drive voltage reaches at least 10 V for full enhancement and use a Kelvin-source connection (pin 4) to avoid R<sub>DS(on)</sub> degradation from source-bond inductance. Keep the source-pad copper pour to at least 100 mm² to achieve the rated 75 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found on the manufacturer datasheet - including same-brand OptiMOS 6 family variants and cross-brand equivalents that share the PG-TDSON-8 footprint.
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC100N04S6L025ATMA1 is a 40 V N-channel power MOSFET built on Infineon's latest OptiMOS 6 40V process technology, rated for 100 A continuous drain current and housed in a 5 x 6 mm PG-TDSON-8 (SuperSO8) leadless surface-mount package. It delivers an ultra-low typical on-state resistance of 2.5 mOhm at 10 V VGS and dissipates up to 62 W at TC = 25 C. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field at the gate to modulate current flow between drain and source. In the broader device taxonomy, this part sits within discrete semiconductors -> MOSFETs -> N-channel enhancement-mode power MOSFETs -> low-voltage (sub-75 V) trench MOSFETs designed for high-current switching. The OptiMOS 6 family represents Infineon's sixth-generation 40V trench technology, optimized for the lowest possible RDS(on) x Qg figure of merit at automotive-grade reliability. Key features of the IAUC100N04S6L025ATMA1 include 2.5 mOhm max RDS(on) at VGS=10 V, 100 A continuous ID at TC=25 C, 62 W power dissipation, and an automotive-grade AEC-Q101 qualification. The SuperSO8 5x6 package provides a Kelvin-source connection at pin 4 that suppresses the gate-loop source-inductance effect, enabling cleaner switching transitions and lower dynamic losses than standard SO-8 devices. It is rated for operation from -55 C to +175 C junction temperature. Technically, this part uses a shielded-gate trench cell architecture. The IAUC prefix in the part number designates Infineon's automotive-grade product line. The "S6" suffix indicates the OptiMOS 6 technology generation, "L025" denotes the 2.5 mOhm RDS(on) class, and "ATMA1" is the tape-and-reel ordering code. Compared with the prior OptiMOS 5 generation, this device achieves roughly 30% lower RDS(on) and significantly reduced gate charge. Typical applications include automotive 12 V and 24 V load switching, electric power steering (EPS), brake-by-wire systems, DC-DC converter high-side switches, battery management system (BMS) protection, and motor drive H-bridges. It is also widely deployed in industrial e-fuses, hot-swap controllers, and 48 V mild-hybrid systems where its low conduction loss improves system efficiency. When designing with this device, pay close attention to PCB layout for thermal management. The PG-TDSON-8 package requires a sufficiently large drain-pad copper pour (typically >= 1 sq inch on a 2 oz outer layer) to keep RDS(on) rise under continuous load. Use a Kelvin-source connection to pin 4 (or leave it floating if not used) to minimize source-inductance-induced switching loss. This page consolidates Infineon datasheet parameters, distributor stock and pricing tiers, AEC-Q101 qualification status, drop-in alternative MPNs, and practical layout guidance - information not assembled in any single source on the open web.
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC100N04S6N015ATMA1 is a 40 V N-channel OptiMOS-6 power MOSFET rated for 100 A continuous drain current (Tc) and 1.5 mΩ typical R<sub>DS(on)</sub>, packaged in a 5x6 mm PG-TDSON-8 (SSO8) leadless surface-mount outline for automotive power-train and high-current switching applications. The device is part of Infineon's OptiMOS-6 40V generation, designed to deliver the industry's lowest on-resistance per silicon area in the small 5x6 mm² footprint, with 100 W (Tc) power dissipation capability and AEC-Q101 qualification. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate current flow between drain and source terminals. Within the broader power semiconductor taxonomy, the IAUC100N04S6N015ATMA1 sits as a discrete N-channel enhancement-mode MOSFET, belonging to the OptiMOS-6 family of low-voltage (≤40V) trench MOSFETs optimized for synchronous rectification, motor control, and battery switching in 12 V/24 V automotive systems. Its SS08 leadless package is a member of the TDSON family that provides a low parasitic source-inductance footprint via the drain tab. Key features include a 40 V drain-source breakdown voltage (V<sub>DS</sub>), 1.5 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, 100 A continuous drain current at case temperature 25 °C, and 100 W power dissipation. The device is qualified to AEC-Q101 for automotive use, supports a standard ±20 V gate-source voltage rating, and is rated MSL 1 for unlimited floor-life reflow compatibility. From an architecture perspective, the IAUC100N04S6N015ATMA1 uses Infineon's latest OptiMOS-6 trench-gate cell technology to minimize R<sub>DS(on)</sub> x Q<sub>g</sub> figure of merit - critical for high-frequency synchronous buck converters where switching losses dominate. The 5x6 mm² SS08 leadless footprint allows direct attachment to PCB thermal copper, dramatically reducing junction-to-ambient thermal resistance versus traditional DPAK alternatives. Typical applications include automotive 12 V/24 V high-current switching, electric power-steering (EPS) motor drives, braking system controllers, body-electronics load switches, and battery-disconnect units in mild-hybrid vehicles. It also serves as the synchronous rectifier MOSFET in 48 V-to-12 V DC-DC converters. When designing with this MOSFET, use V<sub>GS</sub>=10 V drive for full enhancement-mode operation, place the gate driver within 10 mm of the gate pin to minimize parasitic inductance, and ensure the PCB drain copper pour is sized for the continuous current rating. A gate-source resistor of 10 kΩ is recommended to prevent unintended turn-on from dV/dt transients. This page synthesizes distributor pricing, AEC-Q101 compliance verification, drop-in alternatives in the PG-TDSON-8 footprint, and thermal design guidance not found in the manufacturer datasheet alone.