IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
Teilenummer: IAUA120N04S5N014AUMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.45 | $3,45 |
| 10 | $3.1 | $31,00 |
| 100 | $2.78 | $278,00 |
| 500 | $2.45 | $1.225,00 |
| 1.000 | $2.18 | $2.180,00 |
IAUA120N04S5N014AUMA1 Übersicht
An N-channel power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a voltage-controlled device in which a positive gate-to-source voltage creates a conducting channel between drain and source, enabling high-current switching or low-loss linear regulation. Within the broader semiconductor hierarchy it belongs to the discrete transistor family, sits beneath Insulated-Gate Bipolar Transistors (IGBTs) for sub-600 V applications, and above RF MOSFETs and small-signal FETs; it is the workhorse of synchronous rectification, motor drive, and high-current load switching. The IAUA120N04S5N014AUMA1 is part of Infineon's OptiMOS™ 5 40 V family that targets automotive 12 V and 24 V board nets.
Key features include an extremely low on-state resistance of 1.4 mΩ maximum at V<sub>GS</sub>=10 V, a logic-level-compatible gate threshold range suitable for direct microcontroller drive, and 100% avalanche-tested ruggedness. The sTOLL package's source-down clip-mount construction gives a junction-to-case thermal resistance compatible with 136 W power dissipation on properly designed PCBs.
Architecturally, the device uses Infineon's advanced OptiMOS™ 5 trench cell structure that minimizes both R<sub>DS(on)</sub> × Q<sub>g</sub> and R<sub>DS(on)</sub> × Q<sub>oss</sub> figure-of-merits, which directly translates to lower conduction loss and reduced switching loss. This makes it ideal for high-frequency synchronous buck converters and OR-ing circuits that cycle at 100 kHz to 1 MHz.
Typical applications include automotive 12 V and 24 V brushless DC (BLDC) motor drives, electronic power steering (EPS), electric water/oil pumps, body-control modules, high-current DC-DC converters, and battery protection circuits. Its automotive-grade reliability also suits industrial high-current switching.
When designing with this device, ensure the PCB land pattern uses the recommended sTOLL footprint with sufficient copper area on the drain tab to keep junction temperature within safe limits; a 1 oz copper pour of at least 1 cm² is recommended for full 100 A+ operation.
Drop-in-Alternativen für IAUA120N04S5N014AUMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IAUA120N04S5N014AUMA1 (gleiche Bauform und Footprint) – abweichend in Package, MSL Level, Operating Temperature Range, RoHS Status, Polarity / Channel Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IAUC120N04S6N010ATMA1
✅ Drop-In✓ Auf Lager
$0.68 / Stück
Datenblatt ansehen →IPC100N04S5L1R5ATMA1
✅ Drop-In✓ Auf Lager
$1.18 / Stück
Datenblatt ansehen →IAUC120N04S6N009ATMA1
✅ Drop-In✓ Auf Lager
$1.6 / Stück
Datenblatt ansehen →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ Auf Lager
$0.36 / Stück
Datenblatt ansehen →IPC100N04S5L1R7ATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUA120N04S5N014AUMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Part Number | IAUA120N04S5N014AUMA1 |
| Series | OptiMOS™ 5 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΩ |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | 136 W |
| Gehäuse | PG-HSOF-5-2 (sTOLL) |
| Montageart | Surface Mount |
| Pin-Anzahl | 5 + Tab (6 effective) |
| Gate Drive | Enhancement Mode |
| Automotive Qualification | AEC-Q101 |
| RoHS-Status | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) |
IAUA120N04S5N014AUMA1 Pin-Konfiguration
| Pin 1 | Gate (G) — Gate drive input; 0–10 V VGS for full enhancement |
| Pin 2 | Source-sense — Kelvin source connection for gate drive return |
| Pin 3 | Source (S) — Source terminal; internally bonded to tab |
| Pin 4 | Source (S) — Source terminal; internally bonded to tab |
| Pin 5 | Source (S) — Source terminal; internally bonded to tab |
| Pin Tab | Drain (D) — Drain terminal and primary thermal pad; large exposed tab on package bottom |
Sicherer Arbeitsbereich (DC, T_C=25°C)
Typische Anwendungen
IAUA120N04S5N014AUMA1 ist geeignet für 6 Anwendungs: Automotive 12V BLDC Motor Drive, Electric Power Steering (EPS) Power Stage, High-Current 48V-to-12V Bidirectional DC-DC Converter, Battery Protection and OR-ing Circuits, Industrial High-Current Load Switching, Solar Inverter Low-Side Switch.
Automotive 12V BLDC Motor Drive
The IAUA120N04S5N014AUMA1 is purpose-built for automotive 12 V brushless DC (BLDC) motor drives in pumps, fans, and HVAC blowers. Its 1.4 mΩ R<sub>DS(on)</sub> keeps conduction losses below 5 W at 60 A continuous phase current, while the AEC-Q101 qualification covers -40°C to +125°C automotive under-hood operation. The sTOLL package's downward source-clip enables direct PCB cooling, eliminating the need for an external heatsink in compact ECU enclosures and reducing BOM cost by $0.50–$1.00 per inverter stage.
Empfohlen
Electric Power Steering (EPS) Power Stage
In EPS power stages the IAUA120N04S5N014AUMA1 serves as the low-side synchronous rectifier switch in 3-phase inverter legs driving the steering assist motor. With 120 A continuous rating and 1.4 mΩ R<sub>DS(on)</sub>, it handles peak assist currents up to 80 A while keeping I²R losses under 10 W per device — critical for ECU thermal management. AEC-Q101 qualification supports ISO 26262 ASIL-D functional safety integration, and the sTOLL package footprint enables compact ECU layouts that fit behind the steering wheel.
Empfohlen
High-Current 48V-to-12V Bidirectional DC-DC Converter
The IAUA120N04S5N014AUMA1 is well suited for 48 V mild-hybrid DC-DC converters as the primary switching element on the 12 V synchronous rectification side. Its 40 V V<sub>DSS</sub> rating provides adequate margin for 12 V transients, while the 1.4 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V enables 95%+ efficiency at 100 A continuous load. Switching frequencies of 100–300 kHz are achievable thanks to OptiMOS™ 5's optimized Q<sub>g</sub> × R<sub>DS(on)</sub> figure of merit, and the sTOLL package's 1°C/W thermal resistance keeps junction rise below 50°C at full load.
Empfohlen
Battery Protection and OR-ing Circuits
In battery management and OR-ing applications the IAUA120N04S5N014AUMA1 serves as the main disconnect switch, leveraging its 1.4 mΩ R<sub>DS(on)</sub> to minimize voltage drop during 100 A+ discharge events. The AEC-Q101 qualification makes it drop-in ready for automotive battery packs and e-bike BMS designs where safety-critical disconnect is required. The sTOLL package's exposed drain tab provides direct PCB thermal dissipation, while the 40 V V<sub>DSS</sub> comfortably handles 16-cell Li-ion packs and 48 V mild-hybrid battery rails.
Empfohlen
Industrial High-Current Load Switching
Beyond automotive the IAUA120N04S5N014AUMA1 excels in industrial 24 V PLC output modules, robotic joint drivers, and high-current solenoid controllers. Its 120 A continuous rating enables direct switching of multi-kilowatt loads without paralleling, while the 1.4 mΩ R<sub>DS(on)</sub> keeps conduction losses below 0.5% at full load — critical for energy-efficiency standards like ENERGY STAR. The PG-HSOF-5-2 sTOLL package provides superior thermal performance versus DPAK alternatives, with junction-to-case thermal resistance suitable for industrial ambient temperatures up to 85°C.
Empfohlen
Solar Inverter Low-Side Switch
The IAUA120N04S5N014AUMA1 is also used as the low-side switch in micro-inverter and string-inverter power stages operating from 24 V battery or 48 V photovoltaic strings. Its 1.4 mΩ R<sub>DS(on)</sub> and 120 A continuous current enable 3–5 kW inverter designs in a single switch per phase, eliminating the need for multi-device paralleling and associated current-sharing circuitry. OptiMOS™ 5 technology minimizes reverse-recovery losses in body-diode conduction, while the AEC-Q101 qualification provides over-rated reliability for outdoor solar installations.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IAUA120N04S5N014AUMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IAUC120N04S6N010ATMA1 | IPC100N04S5L1R5ATMA1 | IAUC120N04S6N009ATMA1 | IPC50N04S5L5R5ATMA1 | IPC100N04S5L1R7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-5-2 (sTOLL) | PG-HSOF-5-2 (sTOLL) - same | PG-HSOF-5-2 (sTOLL) - same | PG-HSOF-5-2 (sTOLL) - same | PG-HSOF-5-2 (sTOLL) - same | PG-HSOF-5-2 (sTOLL) - same |
| V_DSS (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (A) | 120 A | 120 A | 100 A | 120 A | 50 A | 100 A |
| R_DS(on) Max @ V_GS=10V (mΩ) | 1.4 mΩ | 1.0 mΩ | 1.5 mΩ | 0.9 mΩ | 5.5 mΩ | 1.7 mΩ |
| Technology Generation | OptiMOS™ 5 | OptiMOS™ 6 | OptiMOS™ 5 | OptiMOS™ 6 | OptiMOS™ 5 | OptiMOS™ 5 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Wichtigste Unterscheidungsmerkmale
- 1.4 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V with 120 A continuous current (vs. IPC100N04S5L1R5ATMA1)
- OptiMOS™ 5 technology balance of R<sub>DS(on)</sub> × Q<sub>g</sub> (vs. IAUC120N04S6N010ATMA1)
- AEC-Q101 qualified for ASIL-D automotive systems (vs. IPC50N04S5L5R5ATMA1)
Designhinweise
Estimated: at 80 A continuous load with 1.4 mΩ R<sub>DS(on)</sub>, conduction loss is ~9 W. The PG-HSOF-5-2 (sTOLL) package relies on PCB copper to dissipate heat; design with at least 25×25 mm of 2 oz copper on the drain tab to keep θJA below 30°C/W. Without this copper area the junction temperature will exceed 175°C and trigger thermal shutdown. For full 120 A operation use forced-air cooling or a thermal interface material to an aluminum heatsink.
Use the recommended sTOLL land pattern with a non-solder-mask-defined (NSMD) drain pad to improve thermal conductivity to inner copper layers. Place gate drive components within 5 mm of the gate pin to minimize parasitic inductance that causes ringing and potential V<sub>GS</sub> overshoot. A 10 kΩ gate-source pull-down resistor is recommended to prevent accidental turn-on during system power-up transients.
Critical: never exceed the 40 V V<sub>DSS</sub> rating — automotive load-dump transients can reach 35 V on a 12 V system, leaving only 5 V margin. Add a TVS diode (e.g. 36 V bidirectional) across the drain-source terminals for designs exposed to jump-start (24 V) events. Also verify the gate drive voltage stays within the datasheet's maximum V<sub>GS</sub> rating; over-voltage on the gate causes immediate and permanent device failure.
Keep the high-current loop (drain-source) as small as possible — a 10 nH loop inductance can produce 20 V spikes at 100 A switching transients, potentially exceeding V<sub>DS</sub>. Use a kelvin source connection (pin 2) for the gate drive return path to separate the gate-drive current from the main source current, eliminating source-inductance-induced turn-on losses.
Compliance-Informationen
AEC-Q101 qualified per Infineon product page. RoHS and REACH compliant; halogen-free per JEDEC JS709. Conflict-mineral reporting available from Infineon sustainability portal.
