1ED3122MC12HXUMA1 vs 1ED3124MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED3122MC12HXUMA1 von Infineon und 1ED3124MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1ED3122MC12HXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $1,45 |
| Product Type | Isolated Gate Driver (single-channel) | — |
| Isolation Technology | Coreless Transformer (CT) | Magnetic coupling (coreless transformer) |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | High-side / Low-side (non-inverting) |
| Number of Channels | 1 | — |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | — |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | — |
| Betriebstemperatur | -40 C to +125 C | -40 C to +125 C |
| Gehäuse | PG-DSO-8-66 (300-mil DSO-8) | PG-DSO-8 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 2 | — |
| RoHS-Status | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Anzahl der Ausgänge | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Anstiegszeit | — | 15 ns |
| Abfallzeit | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |