1ED3122MC12HXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1ED3122MC12HXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon
1ED3122MC12HXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3122MC12HXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.92 | $1.45 |
| Product Type | Isolated Gate Driver (single-channel) | β |
| Isolation Technology | Coreless Transformer (CT) | Magnetic coupling (coreless transformer) |
| Isolation Voltage (Vrms) | 5.7 kVrms | β |
| Maximum Transient Isolation (Vpk) | 8 kVpk | β |
| Output Current (source / sink) | 10 A / 9 A | β |
| Configuration | High-side, non-inverting | High-side / Low-side (non-inverting) |
| Number of Channels | 1 | β |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | β |
| Propagation Delay (typ.) | 30 ns | β |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | β |
| Miller Clamp | Active (integrated) | β |
| Short-Circuit Clamping | Yes | β |
| UVLO | Primary and secondary side | β |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C |
| Package | PG-DSO-8-66 (300-mil DSO-8) | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 2 | β |
| RoHS Status | Compliant | Compliant |
| Channel Type | β | Single-channel |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |