1ED3122MC12HXUMA1 vs 1ED3124MC12HXUMA1 Comparison

Detailed side-by-side comparison of 1ED3122MC12HXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1ED3122MC12HXUMA1 1ED3124MC12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Isolated Gate Driver (single-channel) —
Isolation Technology Coreless Transformer (CT) Magnetic coupling (coreless transformer)
Isolation Voltage (Vrms) 5.7 kVrms —
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting High-side / Low-side (non-inverting)
Number of Channels 1 —
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns —
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) —
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
Operating Temperature -40 C to +125 C -40 C to +125 C
Package PG-DSO-8-66 (300-mil DSO-8) PG-DSO-8 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level 2 —
RoHS Status Compliant Compliant
Channel Type — Single-channel
Number of Drivers — 1
Number of Outputs — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Rise Time — 15 ns
Fall Time — 30 ns
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

Datasheets & Resources

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