1EDB7275FXUMA1 vs 1ED3124MU12HXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDB7275FXUMA1 von Infineon und 1ED3124MU12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDB7275FXUMA1 1ED3124MU12HXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,68 $0,89
Product Type Single-channel isolated gate driver IC Single-channel isolated gate driver IC
Topology Supported High-side / low-side, half-bridge (with two parts) —
Isolation Technology Coreless transformer (CT) magnetic coupling Coreless transformer (CT)
Isolation Voltage (Viso) 3000 Vrms —
Common-Mode Transient Immunity (CMTI) 300 V/ns (minimum) 200 kV/us minimum
Peak Source Output Current 5.4 A (typical) —
Peak Sink Output Current 9.8 A (typical) —
Propagation Delay +6 / -4 ns (typical, see datasheet family) —
Supported Switch Technologies Si MOSFET, SiC MOSFET, GaN HEMT —
Gehäuse PG-DSO-8 (150 mil DSO, 8-pin) PG-DSO-8-66 (DSO-8 wide-body)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: full operating temperature range] -40C to +125C
UVLO Protection Yes (secondary side) —
Marking Code 1B7275A —
RoHS-Status Compliant Compliant
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
Ausgangskonfiguration — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Propagation Delay (typ.) — 90 ns
UVLO Threshold — 10.5 V
Creepage Distance — >8 mm
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules
MSL-Level — MSL2 (per JEDEC J-STD-020)

Datenblätter & Ressourcen

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