1EDB7275FXUMA1 vs 1ED3124MU12HXUMA1 Comparación
Comparación detallada lado a lado de 1EDB7275FXUMA1 por Infineon y 1ED3124MU12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1EDB7275FXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,68 | $0,89 |
| Product Type | Single-channel isolated gate driver IC | Single-channel isolated gate driver IC |
| Topology Supported | High-side / low-side, half-bridge (with two parts) | — |
| Isolation Technology | Coreless transformer (CT) magnetic coupling | Coreless transformer (CT) |
| Isolation Voltage (Viso) | 3000 Vrms | — |
| Common-Mode Transient Immunity (CMTI) | 300 V/ns (minimum) | 200 kV/us minimum |
| Peak Source Output Current | 5.4 A (typical) | — |
| Peak Sink Output Current | 9.8 A (typical) | — |
| Propagation Delay | +6 / -4 ns (typical, see datasheet family) | — |
| Supported Switch Technologies | Si MOSFET, SiC MOSFET, GaN HEMT | — |
| Encapsulado | PG-DSO-8 (150 mil DSO, 8-pin) | PG-DSO-8-66 (DSO-8 wide-body) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: full operating temperature range] | -40C to +125C |
| UVLO Protection | Yes (secondary side) | — |
| Marking Code | 1B7275A | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Configuración de salida | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Propagation Delay (typ.) | — | 90 ns |
| UVLO Threshold | — | 10.5 V |
| Creepage Distance | — | >8 mm |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |
| Nivel MSL | — | MSL2 (per JEDEC J-STD-020) |