1EDB7275FXUMA1 vs 1ED3124MU12HXUMA1 对比

详细并排对比 1EDB7275FXUMA1 出自 Infineon 和 1ED3124MU12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDB7275FXUMA1 1ED3124MU12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.68 $0.89
Product Type Single-channel isolated gate driver IC Single-channel isolated gate driver IC
Topology Supported High-side / low-side, half-bridge (with two parts) —
Isolation Technology Coreless transformer (CT) magnetic coupling Coreless transformer (CT)
Isolation Voltage (Viso) 3000 Vrms —
Common-Mode Transient Immunity (CMTI) 300 V/ns (minimum) 200 kV/us minimum
Peak Source Output Current 5.4 A (typical) —
Peak Sink Output Current 9.8 A (typical) —
Propagation Delay +6 / -4 ns (typical, see datasheet family) —
Supported Switch Technologies Si MOSFET, SiC MOSFET, GaN HEMT —
封装 PG-DSO-8 (150 mil DSO, 8-pin) PG-DSO-8-66 (DSO-8 wide-body)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: full operating temperature range] -40C to +125C
UVLO Protection Yes (secondary side) —
Marking Code 1B7275A —
RoHS 状态 Compliant Compliant
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
输出配置 — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Propagation Delay (typ.) — 90 ns
UVLO Threshold — 10.5 V
Creepage Distance — >8 mm
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules
MSL 等级 — MSL2 (per JEDEC J-STD-020)

数据手册与资源

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