1EDB7275FXUMA1 vs 1ED3124MU12HXUMA1 Comparaison
Comparaison détaillée côte à côte de 1EDB7275FXUMA1 par Infineon et 1ED3124MU12HXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1EDB7275FXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,68 | $0,89 |
| Product Type | Single-channel isolated gate driver IC | Single-channel isolated gate driver IC |
| Topology Supported | High-side / low-side, half-bridge (with two parts) | — |
| Isolation Technology | Coreless transformer (CT) magnetic coupling | Coreless transformer (CT) |
| Isolation Voltage (Viso) | 3000 Vrms | — |
| Common-Mode Transient Immunity (CMTI) | 300 V/ns (minimum) | 200 kV/us minimum |
| Peak Source Output Current | 5.4 A (typical) | — |
| Peak Sink Output Current | 9.8 A (typical) | — |
| Propagation Delay | +6 / -4 ns (typical, see datasheet family) | — |
| Supported Switch Technologies | Si MOSFET, SiC MOSFET, GaN HEMT | — |
| Boîtier | PG-DSO-8 (150 mil DSO, 8-pin) | PG-DSO-8-66 (DSO-8 wide-body) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: full operating temperature range] | -40C to +125C |
| UVLO Protection | Yes (secondary side) | — |
| Marking Code | 1B7275A | — |
| Statut RoHS | Compliant | Compliant |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Configuration de sortie | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Propagation Delay (typ.) | — | 90 ns |
| UVLO Threshold | — | 10.5 V |
| Creepage Distance | — | >8 mm |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |
| Niveau MSL | — | MSL2 (per JEDEC J-STD-020) |