1EDN7136GXTMA1 vs 2EDN7434RXTMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7136GXTMA1 von Infineon und 2EDN7434RXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7136GXTMA1 2EDN7434RXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,02 $0,34
Product Type Low-side gate driver IC —
Configuration Single channel, non-inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Target Switch GaN HEMT (CoolGaN) / MOSFET —
Input Logic TTL/CMOS compatible —
UVLO Yes (VDD under-voltage lockout) —
Propagation Delay Sub-nanosecond class —
Gehäuse PG-VSON-10-4 (leadless, thermal pad) PG-TSSOP-8 (3.0 x 3.0 mm)
Montageart Surface Mount Surface Mount
Betriebstemperatur -40 C to +125 C —
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Lead-free Yes —
Input Voltage (VDD) [DATA_NEEDED: VDD range V] —
Output Voltage (GaN gate) Approximately 6 V (regulated) —
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Input Logic Compatibility — LV-TTL, non-inverting
Absolute Max Input Voltage — -12 V to +22 V
Supply Voltage Range — [DATA_NEEDED: VDD range]
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature]
Active Output Voltage Clamping — Yes

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