1EDN7136GXTMA1 vs 2EDN7434RXTMA1 对比
详细并排对比 1EDN7136GXTMA1 出自 Infineon 和 2EDN7434RXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7136GXTMA1 | 2EDN7434RXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.02 | $0.34 |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 8 A | — |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | — |
| Propagation Delay | Sub-nanosecond class | — |
| 封装 | PG-VSON-10-4 (leadless, thermal pad) | PG-TSSOP-8 (3.0 x 3.0 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40 C to +125 C | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | EiceDRIVER 2EDN |
| Driver Configuration | — | Dual-channel low-side |
| Number of Drivers | — | 2 |
| Peak Output Current | — | 5 A (source/sink) |
| Rated Output Current | — | 4 A |
| Output Resistance (Low) | — | [DATA_NEEDED: output resistance Ron low] |
| Output Resistance (High) | — | [DATA_NEEDED: output resistance Ron high] |
| Propagation Delay (Typ.) | — | 19 ns |
| Input Logic Compatibility | — | LV-TTL, non-inverting |
| Absolute Max Input Voltage | — | -12 V to +22 V |
| Supply Voltage Range | — | [DATA_NEEDED: VDD range] |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature] |
| Active Output Voltage Clamping | — | Yes |