1EDN7136UXTSA1 vs 2EDN8533RXTMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7136UXTSA1 von Infineon und 2EDN8533RXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7136UXTSA1 2EDN8533RXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $0,78
Funktion High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Anzahl der Ausgänge 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) Yes (VCC UVLO)
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Betriebstemperaturbereich -40 C to +150 C [DATA_NEEDED: operating temperature]
Gehäuse TSNP-6 with exposed pad (PG-VSON-1) PG-TSSOP-8 (exposed pad)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant (per Infineon product page)
Lead-Free Yes —
Halogenfrei Yes (per Infineon product family convention) —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Number of Channels — 2
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)

Datenblätter & Ressourcen

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