1EDN7136UXTSA1 vs 2EDN8533RXTMA1 비교

다음의 상세 나란히 비교: 1EDN7136UXTSA1 제조: Infineon 및 2EDN8533RXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1EDN7136UXTSA1 2EDN8533RXTMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.74 $0.78
기능 High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
출력 수 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) Yes (VCC UVLO)
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
동작 온도 범위 -40 C to +150 C [DATA_NEEDED: operating temperature]
패키지 TSNP-6 with exposed pad (PG-VSON-1) PG-TSSOP-8 (exposed pad)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant (per Infineon product page)
Lead-Free Yes —
할로겐 프리 Yes (per Infineon product family convention) —
MSL 레벨 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Number of Channels — 2
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)

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