1EDN7136UXTSA1 vs 2EDN8533RXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7136UXTSA1 by Infineon and 2EDN8533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7136UXTSA1 2EDN8533RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Number of Outputs 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) Yes (VCC UVLO)
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Operating Temperature Range -40 C to +150 C [DATA_NEEDED: operating temperature]
Package TSNP-6 with exposed pad (PG-VSON-1) PG-TSSOP-8 (exposed pad)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (per Infineon product page)
Lead-Free Yes —
Halogen Free Yes (per Infineon product family convention) —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Number of Channels — 2
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)

Datasheets & Resources

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