1EDN7146UXTSA1 vs 1EDN7136UXTSA1 Vergleich

Detaillierter Direktvergleich von 1EDN7146UXTSA1 von Infineon und 1EDN7136UXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7146UXTSA1 1EDN7136UXTSA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $0,74
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
Anstiegszeit [DATA_NEEDED: typical rise time ns] —
Abfallzeit [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
Betriebstemperaturbereich -40C to +125C -40 C to +150 C
Gehäuse PG-VSON-1 (6-pin with exposed pad) TSNP-6 with exposed pad (PG-VSON-1)
Montageart Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
Funktion — High-side / Low-side gate driver IC
Driven Device Type — GaN HEMT, N-channel MOSFET
Anzahl der Ausgänge — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
Lead-Free — Yes
Halogenfrei — Yes (per Infineon product family convention)

Datenblätter & Ressourcen

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