1EDN7146UXTSA1 vs 1EDN7136UXTSA1 比較
詳細な並列比較: 1EDN7146UXTSA1 メーカー: Infineon および 1EDN7136UXTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 1EDN7146UXTSA1 | 1EDN7136UXTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.82 | $0.74 |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| 立ち上がり時間 | [DATA_NEEDED: typical rise time ns] | — |
| 立ち下がり時間 | [DATA_NEEDED: typical fall time ns] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| 動作温度範囲 | -40C to +125C | -40 C to +150 C |
| パッケージ | PG-VSON-1 (6-pin with exposed pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| 実装タイプ | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS ステータス | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| 機能 | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 出力数 | — | 2 (high-side and low-side) |
| Peak Source Current | — | 1 A |
| Peak Sink Current | — | 2 A |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| Lead-Free | — | Yes |
| ハロゲンフリー | — | Yes (per Infineon product family convention) |