1EDN7146UXTSA1 vs 1EDN7136UXTSA1 对比
详细并排对比 1EDN7146UXTSA1 出自 Infineon 和 1EDN7136UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7146UXTSA1 | 1EDN7136UXTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.74 |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| 上升时间 | [DATA_NEEDED: typical rise time ns] | — |
| 下降时间 | [DATA_NEEDED: typical fall time ns] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| 工作温度范围 | -40C to +125C | -40 C to +150 C |
| 封装 | PG-VSON-1 (6-pin with exposed pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| 安装类型 | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| 功能 | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 输出数量 | — | 2 (high-side and low-side) |
| Peak Source Current | — | 1 A |
| Peak Sink Current | — | 2 A |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| Lead-Free | — | Yes |
| 无卤 | — | Yes (per Infineon product family convention) |