2ED21084S06JXUMA1 vs 2ED21064S06JXUMA1 Vergleich
Detaillierter Direktvergleich von 2ED21084S06JXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2ED21084S06JXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,85 |
| Funktion | Half-bridge gate driver | High-Side and Low-Side Gate Driver |
| Topologie | Half-bridge (high-side + low-side) | High-Side, Low-Side with integrated bootstrap diode |
| High-side Offset Voltage (max) | 650 V | — |
| VCC Supply Voltage | 10 V to 20 V | — |
| Source Current (typical) | 0.29 A | 0.29 A |
| Sink Current (typical) | 0.7 A | 0.7 A |
| Propagation Delay Rise (typical) | 100 ns | — |
| Propagation Delay Fall (typical) | 35 ns | — |
| Input Logic | Non-inverting (HIN/LIN) | — |
| Bootstrap Diode | Integrated | Integrated |
| UVLO (VCC) | [DATA_NEEDED: VCC UVLO threshold] | — |
| UVLO (VBS) | [DATA_NEEDED: VBS UVLO threshold] | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | PG-DSO-14-49 (14-pin wide-body SOIC) | PG-DSO-14 (14-pin SOIC) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | ROHS3 Compliant |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | — | -0.7 V |