2EDL5023U2DXTMA1 vs 2EDL900G3XTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL5023U2DXTMA1 von Infineon und 2EDL900G3XTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL5023U2DXTMA1 2EDL900G3XTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,40 $2,20
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Driver Type Non-Inverting —
Anzahl der Ausgänge 2 —
Bootstrap Voltage Rating 120 V —
Peak Gate Drive Current 3 A (typical sink/source) —
Number of Channels 1 (Half-Bridge) 2 (high-side + low-side)
Input Logic TTL-compatible —
Input Voltage (VDD) 5 V (gate drive supply) —
Enable Pin (EN) Active-High (logic high or left open enables) —
PWM Inputs HI (high-side), LI (low-side) —
Ground Return VSS —
Gehäuse PG-TSNP-12-5 TSNP-16 (3x3 mm) with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperatur -40C to +125C (typical industrial range) —
RoHS-Status Compliant Compliant
Tape and Reel Packaging Yes —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Isolation Type — Junction isolation (JI), 120 V
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Betriebstemperaturbereich — -40 C to +125 C
MSL-Level — 1

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