2EDL5023U2DXTMA1 vs 2EDL900G3XTMA1 비교
다음의 상세 나란히 비교: 2EDL5023U2DXTMA1 제조: Infineon 및 2EDL900G3XTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2EDL5023U2DXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.40 | $2.20 |
| Driver Configuration | Half-Bridge (High-Side + Low-Side) | — |
| Driver Type | Non-Inverting | — |
| 출력 수 | 2 | — |
| Bootstrap Voltage Rating | 120 V | — |
| Peak Gate Drive Current | 3 A (typical sink/source) | — |
| Number of Channels | 1 (Half-Bridge) | 2 (high-side + low-side) |
| Input Logic | TTL-compatible | — |
| Input Voltage (VDD) | 5 V (gate drive supply) | — |
| Enable Pin (EN) | Active-High (logic high or left open enables) | — |
| PWM Inputs | HI (high-side), LI (low-side) | — |
| Ground Return | VSS | — |
| 패키지 | PG-TSNP-12-5 | TSNP-16 (3x3 mm) with exposed pad |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -40C to +125C (typical industrial range) | — |
| RoHS 상태 | Compliant | Compliant |
| Tape and Reel Packaging | Yes | — |
| Product Type | — | Dual-channel level-shift gate driver IC |
| Topology Supported | — | Half-bridge, high-side, low-side |
| Isolation Type | — | Junction isolation (JI), 120 V |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 6 A |
| Drive Output Voltage Range | — | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | — | 4 V to 16 V |
| Switching Device Supported | — | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | — | Yes (programmable) |
| Integrated Current Sense Amplifier | — | Yes |
| PWM Modes | — | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Input Logic Compatibility | — | 3.3 V / 5 V / TTL (per datasheet) |
| 동작 온도 범위 | — | -40 C to +125 C |
| MSL 레벨 | — | 1 |