2EDL5023U2DXTMA1 vs 2EDL900G3XTMA1 Comparación
Comparación detallada lado a lado de 2EDL5023U2DXTMA1 por Infineon y 2EDL900G3XTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2EDL5023U2DXTMA1 - 120V Boot, 3A Half-Bridge Gate Driver | Infineon
2EDL5023U2DXTMA1 ✓ ActivoInfineon
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
2EDL900G3XTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 2EDL5023U2DXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,40 | $2,20 |
| Driver Configuration | Half-Bridge (High-Side + Low-Side) | — |
| Driver Type | Non-Inverting | — |
| Número de salidas | 2 | — |
| Bootstrap Voltage Rating | 120 V | — |
| Peak Gate Drive Current | 3 A (typical sink/source) | — |
| Number of Channels | 1 (Half-Bridge) | 2 (high-side + low-side) |
| Input Logic | TTL-compatible | — |
| Input Voltage (VDD) | 5 V (gate drive supply) | — |
| Enable Pin (EN) | Active-High (logic high or left open enables) | — |
| PWM Inputs | HI (high-side), LI (low-side) | — |
| Ground Return | VSS | — |
| Encapsulado | PG-TSNP-12-5 | TSNP-16 (3x3 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40C to +125C (typical industrial range) | — |
| Estado RoHS | Compliant | Compliant |
| Tape and Reel Packaging | Yes | — |
| Product Type | — | Dual-channel level-shift gate driver IC |
| Topology Supported | — | Half-bridge, high-side, low-side |
| Isolation Type | — | Junction isolation (JI), 120 V |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 6 A |
| Drive Output Voltage Range | — | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | — | 4 V to 16 V |
| Switching Device Supported | — | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | — | Yes (programmable) |
| Integrated Current Sense Amplifier | — | Yes |
| PWM Modes | — | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Input Logic Compatibility | — | 3.3 V / 5 V / TTL (per datasheet) |
| Rango de temperatura de funcionamiento | — | -40 C to +125 C |
| Nivel MSL | — | 1 |