2EDN7434RXTMA1 vs 1EDN7146UXTSA1 Vergleich
Detaillierter Direktvergleich von 2EDN7434RXTMA1 von Infineon und 1EDN7146UXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2EDN7434RXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,34 | $0,82 |
| Manufacturer | Infineon Technologies | — |
| Part Family | EiceDRIVER 2EDN | — |
| Driver Configuration | Dual-channel low-side | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Rated Output Current | 4 A | — |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | — |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | — |
| Propagation Delay (Typ.) | 19 ns | — |
| Input Logic Compatibility | LV-TTL, non-inverting | — |
| Absolute Max Input Voltage | -12 V to +22 V | — |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | — |
| Gehäuse | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-VSON-1 (6-pin with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature] | -40C to +125C |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Active Output Voltage Clamping | Yes | — |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Anstiegszeit | — | [DATA_NEEDED: typical rise time ns] |
| Abfallzeit | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Topology Support | — | Half-bridge, low-side, high-side |