2EDN7434RXTMA1 vs 1EDN7146UXTSA1 Comparison
Detailed side-by-side comparison of 2EDN7434RXTMA1 by Infineon and 1EDN7146UXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7146UXTSA1
1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon
1EDN7146UXTSA1 β ActiveSpecification Comparison
| Parameter | 2EDN7434RXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.82 |
| Manufacturer | Infineon Technologies | β |
| Part Family | EiceDRIVER 2EDN | β |
| Driver Configuration | Dual-channel low-side | β |
| Number of Drivers | 2 | β |
| Peak Output Current | 5 A (source/sink) | β |
| Rated Output Current | 4 A | β |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | β |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | β |
| Propagation Delay (Typ.) | 19 ns | β |
| Input Logic Compatibility | LV-TTL, non-inverting | β |
| Absolute Max Input Voltage | -12 V to +22 V | β |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | β |
| Package | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-VSON-1 (6-pin with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature] | -40C to +125C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Active Output Voltage Clamping | Yes | β |
| Driver Type | β | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | β | 200 V |
| Input Configuration | β | Truly differential (TDI) |
| Output Current (Source / Sink) | β | 1.5 A / 2.5 A |
| Propagation Delay | β | [DATA_NEEDED: typical propagation delay ns] |
| Rise Time | β | [DATA_NEEDED: typical rise time ns] |
| Fall Time | β | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | β | [DATA_NEEDED: VCC range V] |
| Target Transistor | β | GaN SG HEMT or power MOSFET |
| Topology Support | β | Half-bridge, low-side, high-side |