2EDN7434RXTMA1 vs 1EDN7146UXTSA1 Comparaison
Comparaison détaillée côte à côte de 2EDN7434RXTMA1 par Infineon et 1EDN7146UXTSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 2EDN7434RXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,34 | $0,82 |
| Manufacturer | Infineon Technologies | — |
| Part Family | EiceDRIVER 2EDN | — |
| Driver Configuration | Dual-channel low-side | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Rated Output Current | 4 A | — |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | — |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | — |
| Propagation Delay (Typ.) | 19 ns | — |
| Input Logic Compatibility | LV-TTL, non-inverting | — |
| Absolute Max Input Voltage | -12 V to +22 V | — |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | — |
| Boîtier | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-VSON-1 (6-pin with exposed pad) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature] | -40C to +125C |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Active Output Voltage Clamping | Yes | — |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Temps de montée | — | [DATA_NEEDED: typical rise time ns] |
| Temps de descente | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Topology Support | — | Half-bridge, low-side, high-side |