2EDN7434RXTMA1 vs 1EDN7146UXTSA1 Comparación
Comparación detallada lado a lado de 2EDN7434RXTMA1 por Infineon y 1EDN7146UXTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2EDN7434RXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,34 | $0,82 |
| Manufacturer | Infineon Technologies | — |
| Part Family | EiceDRIVER 2EDN | — |
| Driver Configuration | Dual-channel low-side | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Rated Output Current | 4 A | — |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | — |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | — |
| Propagation Delay (Typ.) | 19 ns | — |
| Input Logic Compatibility | LV-TTL, non-inverting | — |
| Absolute Max Input Voltage | -12 V to +22 V | — |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | — |
| Encapsulado | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-VSON-1 (6-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature] | -40C to +125C |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Active Output Voltage Clamping | Yes | — |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Tiempo de subida | — | [DATA_NEEDED: typical rise time ns] |
| Tiempo de bajada | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Topology Support | — | Half-bridge, low-side, high-side |