2EDN8534FXTMA1 vs 2EDN7524GXTMA1 Vergleich
Detaillierter Direktvergleich von 2EDN8534FXTMA1 von Infineon und 2EDN7524GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 2EDN8534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,82 |
| Driver Type | Dual Low-Side Gate Driver | — |
| Number of Channels | 2 | 2 (dual) |
| Ausgangskonfiguration | Non-Inverting | — |
| Peak Source/Sink Current | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay (Typ) | 19 ns | — |
| Channel-to-Channel Delay Match | 1 ns (typ) | — |
| Input Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | -10 V to +20 V on logic pins |
| Active Miller Clamp | Yes (internal) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Betriebstemperaturbereich | -40 C to +125 C | — |
| Gehäuse | PG-DSO-8 (DSO-8) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Family | EiceDRIVER 2EDN | — |
| Product Type | — | Low-side gate driver IC |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Anstiegszeit | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Abfallzeit | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Betriebstemperatur | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |