2EDN8534FXTMA1 vs 2EDN7524GXTMA1 Comparación
Comparación detallada lado a lado de 2EDN8534FXTMA1 por Infineon y 2EDN7524GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 2EDN8534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $0,82 |
| Driver Type | Dual Low-Side Gate Driver | — |
| Number of Channels | 2 | 2 (dual) |
| Configuración de salida | Non-Inverting | — |
| Peak Source/Sink Current | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay (Typ) | 19 ns | — |
| Channel-to-Channel Delay Match | 1 ns (typ) | — |
| Input Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | -10 V to +20 V on logic pins |
| Active Miller Clamp | Yes (internal) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-DSO-8 (DSO-8) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Family | EiceDRIVER 2EDN | — |
| Product Type | — | Low-side gate driver IC |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Tiempo de subida | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Tiempo de bajada | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |