2EDN8534FXTMA1 vs 2EDN7524GXTMA1 Comparison
Detailed side-by-side comparison of 2EDN8534FXTMA1 by Infineon and 2EDN7524GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveSpecification Comparison
| Parameter | 2EDN8534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.82 |
| Driver Type | Dual Low-Side Gate Driver | β |
| Number of Channels | 2 | 2 (dual) |
| Output Configuration | Non-Inverting | β |
| Peak Source/Sink Current | 5 A / 5 A | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay (Typ) | 19 ns | β |
| Channel-to-Channel Delay Match | 1 ns (typ) | β |
| Input Compatibility | LV-TTL | β |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | -10 V to +20 V on logic pins |
| Active Miller Clamp | Yes (internal) | β |
| Under-Voltage Lockout (UVLO) | Yes | β |
| Operating Temperature Range | -40 C to +125 C | β |
| Package | PG-DSO-8 (DSO-8) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Family | EiceDRIVER 2EDN | β |
| Product Type | β | Low-side gate driver IC |
| Drive Current (Source/Sink) | β | 5 A peak |
| Input Logic | β | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Propagation Delay | β | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | β | 1 ns |
| Rise Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Fall Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | β | Rail-to-rail, separate source/sink |
| UVLO Protection | β | Yes |
| Operating Temperature | β | -40 C to +125 C |
| Target Devices | β | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |