2EP101RXTMA1 vs 2EP110RXTMA1 Vergleich
Detaillierter Direktvergleich von 2EP101RXTMA1 von Infineon und 2EP110RXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2EP101RXTMA1 | 2EP110RXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Voltage Regulators |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $1,92 |
| Product Type | Full-Bridge Transformer Driver PMIC | Full-Bridge Transformer Driver PMIC |
| Topologie | Full-bridge (H-bridge) with external transformer | Full-bridge (two internal half-bridges) |
| Supply Voltage Range | 5 V to 20 V | — |
| Maximum Output Power | 5 W | — |
| Switching Frequency Option 1 | 50 kHz | — |
| Switching Frequency Option 2 | 65 kHz | — |
| Duty Cycle Option 1 | 12% | — |
| Duty Cycle Option 2 | 17% | — |
| Anzahl der Ausgänge | 1 (full-bridge differential primary) | — |
| Gehäuse | PG-TSSOP-8 | PG-TSSOP-8 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -40 °C to +125 °C | — |
| Primary Application | Isolated IGBT and SiC MOSFET gate driver supply | — |
| RoHS Compliance | Compliant | — |
| Delivery Form | Tape and Reel (XT suffix) | — |
| Input Voltage (VCC) | — | 20 V nominal |
| Output Power | — | 5 W |
| Schaltfrequenz | — | 50 kHz / 65 kHz (selectable) |
| Target Loads | — | IGBT and SiC MOSFET gate driver supplies |
| Betriebstemperatur | — | -40C to +125C |
| Protection Features | — | Under-voltage lockout (UVLO), over-temperature shutdown (OTP), soft-start |
| Ausgangskonfiguration | — | Drives external centre-tapped transformer (rectification on secondary) |
| MSL-Level | — | MSL 3 (per JEDEC J-STD-020) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |