2N7002-7-F vs 2N7002L 比較
詳細並排比較 2N7002-7-F 由 Diodes Incorporated 與 2N7002L 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ 啟用中
規格比較
| 參數 | 2N7002-7-F | 2N7002L |
|---|---|---|
| 品牌 | Diodes Incorporated | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS max) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 115 mA | — |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA | — |
| Power Dissipation (PD) at Ta | 370 mW | — |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm | — |
| Gate-Source Voltage (VGS) | +/-20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1 V to 2.5 V |
| 封裝 | SOT-23-3 (TO-236) | SOT-23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: Tj / TA operating range] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge typical] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) | — |
| Channel Mode | Enhancement | — |
| Technology | Trench MOSFET | High cell density trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |