2N7002-7-F vs 2N7002L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002-7-F disebabkan oleh Diodes Incorporated dan 2N7002L disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002-7-F 2N7002L
Merek Diodes Incorporated onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement-Mode MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 1 V to 2.5 V
Kemasan SOT-23-3 (TO-236) SOT-23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj / TA operating range] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET High cell density trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 115 mA (Ta)
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Configuration — Single FET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting
Manufacturer — onsemi

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga