2N7002LT1G vs BSS138LT1G-VB Vergleich
Detaillierter Direktvergleich von 2N7002LT1G von onsemi und BSS138LT1G-VB von VBsemi Elec. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002LT1G | BSS138LT1G-VB |
|---|---|---|
| Marke | onsemi | VBsemi Elec |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,02 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Gehäuse | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Kategorie | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | VBsemi Elec |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Transistortyp | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | — | Compliant |
| Equivalent To | — | onsemi BSS138LT1G |