2N7002LT1G vs BSS138LT1G-VB Comparación
Comparación detallada lado a lado de 2N7002LT1G por onsemi y BSS138LT1G-VB por VBsemi Elec. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2N7002LT1G | BSS138LT1G-VB |
|---|---|---|
| Marca | onsemi | VBsemi Elec |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,02 | $0,02 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Encapsulado | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 | — |
| Categoría | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | VBsemi Elec |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Tipo de transistor | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | — | Compliant |
| Equivalent To | — | onsemi BSS138LT1G |