2N7002LT1G vs BSS138LT1G-VB 对比
详细并排对比 2N7002LT1G 出自 onsemi 和 BSS138LT1G-VB 出自 VBsemi Elec。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2N7002LT1G | BSS138LT1G-VB |
|---|---|---|
| 品牌 | onsemi | VBsemi Elec |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.02 | $0.02 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| 封装 | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 | — |
| 分类 | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | VBsemi Elec |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| 晶体管类型 | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | — | Compliant |
| Equivalent To | — | onsemi BSS138LT1G |