BAT41 vs BAT43 Vergleich
Detaillierter Direktvergleich von BAT41 von STMicroelectronics und BAT43 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BAT41 | BAT43 |
|---|---|---|
| Marke | STMicroelectronics | STMicroelectronics |
| Kategorie | Diodes | Diodes |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,03 | $0,08 |
| Device Type | Small Signal Schottky Barrier Diode | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | — |
| Gehäuse | DO-35 (Glass), axial through-hole | DO-35 (glass axial, through-hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | Metal-to-silicon Schottky barrier |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Integrated guard ring against excessive voltage |
| Betriebstemperaturbereich | [DATA_NEEDED: operating junction temperature range] | — |
| Montageart | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Verlustleistung (Ptot) | — | 200 mW at Tl = 65 C |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |