BAT41 vs BAT43 비교

다음의 상세 나란히 비교: BAT41 제조: STMicroelectronics 및 BAT43 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BAT41 BAT43
브랜드 STMicroelectronics STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.03 $0.08
Device Type Small Signal Schottky Barrier Diode Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) 100 V 30 V
Average Forward Current (IF(AV)) 100 mA —
패키지 DO-35 (Glass), axial through-hole DO-35 (glass axial, through-hole)
Technology Metal-to-silicon Schottky with PN guard ring Metal-to-silicon Schottky barrier
Forward Voltage [DATA_NEEDED: forward voltage at rated test current] [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage at rated VR] —
Junction Capacitance [DATA_NEEDED: junction capacitance value] —
Reverse Recovery Time Very low (fast switching, per ST datasheet) —
Turn-On Voltage Very low (low turn-on, per ST datasheet) —
ESD Protection Integrated guard-ring protection against excessive voltage such as ESD Integrated guard ring against excessive voltage
동작 온도 범위 [DATA_NEEDED: operating junction temperature range] —
실장 유형 Through Hole Through Hole
Configuration Single diode Single diode
Series Package Options SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 —
RoHS 상태 [DATA_NEEDED: RoHS compliance statement] [DATA_NEEDED: RoHS status]
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
전력 손실 (Ptot) — 200 mW at Tl = 65 C
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
동작 온도 — [DATA_NEEDED: operating temperature range]

데이터시트 & 자료

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