BAT41 vs BAT43 Comparaison
Comparaison détaillée côte à côte de BAT41 par STMicroelectronics et BAT43 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT41 | BAT43 |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,03 | $0,08 |
| Device Type | Small Signal Schottky Barrier Diode | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | — |
| Boîtier | DO-35 (Glass), axial through-hole | DO-35 (glass axial, through-hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | Metal-to-silicon Schottky barrier |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Integrated guard ring against excessive voltage |
| Plage de température de fonctionnement | [DATA_NEEDED: operating junction temperature range] | — |
| Type de montage | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Dissipation de puissance (Ptot) | — | 200 mW at Tl = 65 C |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |