BAT41 vs BAT43 Comparación
Comparación detallada lado a lado de BAT41 por STMicroelectronics y BAT43 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BAT41 | BAT43 |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,08 |
| Device Type | Small Signal Schottky Barrier Diode | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | — |
| Encapsulado | DO-35 (Glass), axial through-hole | DO-35 (glass axial, through-hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | Metal-to-silicon Schottky barrier |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Integrated guard ring against excessive voltage |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating junction temperature range] | — |
| Tipo de montaje | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Disipación de potencia (Ptot) | — | 200 mW at Tl = 65 C |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |