BAT41 vs BAT43 Comparação
Comparação detalhada lado a lado de BAT41 por STMicroelectronics e BAT43 por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BAT41 | BAT43 |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoria | Diodes | Diodes |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,03 | $0,08 |
| Device Type | Small Signal Schottky Barrier Diode | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | — |
| Encapsulamento | DO-35 (Glass), axial through-hole | DO-35 (glass axial, through-hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | Metal-to-silicon Schottky barrier |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Integrated guard ring against excessive voltage |
| Faixa de temperatura de operação | [DATA_NEEDED: operating junction temperature range] | — |
| Tipo de montagem | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Dissipação de potência (Ptot) | — | 200 mW at Tl = 65 C |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Temperatura de operação | — | [DATA_NEEDED: operating temperature range] |