BAT46 vs 1N5711 Vergleich

Detaillierter Direktvergleich von BAT46 von STMicroelectronics und 1N5711 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BAT46 1N5711
Marke STMicroelectronics STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,05 $0,18
Diode Type Small signal Schottky diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (VR) 100 V —
Average Forward Current (IF) 150 mA —
Forward Voltage (VF) [DATA_NEEDED: VF at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Gehäuse DO-35 (axial, glass) DO-35 (DO-204AH) hermetic axial-lead glass
Montageart Through Hole Through-Hole
Configuration Single diode —
Application Class Protection and routing operations —
RoHS-Status RoHS3 Compliant Compliant
REACH Status Unaffected —
MSL-Level 1 (Unlimited) —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Series BAT46 —
Manufacturer Equivalents STMicroelectronics, Vishay General Semiconductor —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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