BAT46 vs 1N5711 비교

다음의 상세 나란히 비교: BAT46 제조: STMicroelectronics 및 1N5711 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BAT46 1N5711
브랜드 STMicroelectronics STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.05 $0.18
Diode Type Small signal Schottky diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (VR) 100 V —
Average Forward Current (IF) 150 mA —
Forward Voltage (VF) [DATA_NEEDED: VF at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
패키지 DO-35 (axial, glass) DO-35 (DO-204AH) hermetic axial-lead glass
실장 유형 Through Hole Through-Hole
Configuration Single diode —
Application Class Protection and routing operations —
RoHS 상태 RoHS3 Compliant Compliant
REACH Status Unaffected —
MSL 레벨 1 (Unlimited) —
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Series BAT46 —
Manufacturer Equivalents STMicroelectronics, Vishay General Semiconductor —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청