BAT46 vs 1N5711 Comparación

Comparación detallada lado a lado de BAT46 por STMicroelectronics y 1N5711 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro BAT46 1N5711
Marca STMicroelectronics STMicroelectronics
Categoría Diodes Diodes
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,05 $0,18
Diode Type Small signal Schottky diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (VR) 100 V —
Average Forward Current (IF) 150 mA —
Forward Voltage (VF) [DATA_NEEDED: VF at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Encapsulado DO-35 (axial, glass) DO-35 (DO-204AH) hermetic axial-lead glass
Tipo de montaje Through Hole Through-Hole
Configuration Single diode —
Application Class Protection and routing operations —
Estado RoHS RoHS3 Compliant Compliant
REACH Status Unaffected —
Nivel MSL 1 (Unlimited) —
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Series BAT46 —
Manufacturer Equivalents STMicroelectronics, Vishay General Semiconductor —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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