BAT46 vs 1N5711 Comparação

Comparação detalhada lado a lado de BAT46 por STMicroelectronics e 1N5711 por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro BAT46 1N5711
Marca STMicroelectronics STMicroelectronics
Categoria Diodes Diodes
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,05 $0,18
Diode Type Small signal Schottky diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (VR) 100 V —
Average Forward Current (IF) 150 mA —
Forward Voltage (VF) [DATA_NEEDED: VF at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Encapsulamento DO-35 (axial, glass) DO-35 (DO-204AH) hermetic axial-lead glass
Tipo de montagem Through Hole Through-Hole
Configuration Single diode —
Application Class Protection and routing operations —
Status RoHS RoHS3 Compliant Compliant
REACH Status Unaffected —
Nível MSL 1 (Unlimited) —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Series BAT46 —
Manufacturer Equivalents STMicroelectronics, Vishay General Semiconductor —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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