BAT46WH vs 1N5711 Vergleich

Detaillierter Direktvergleich von BAT46WH von Nexperia und 1N5711 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BAT46WH 1N5711
Marke Nexperia STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,03 $0,18
Diode Configuration Single —
Technology Planar Schottky barrier with integrated guard ring —
Repetitive Peak Reverse Voltage (VRRM) 100 V —
Forward Current (IF) 250 mA —
Forward Voltage (VF) 850 mV 0.41 V (at 1 mA, per MACOM)
Non-Repetitive Peak Forward Current 2.5 A —
Maximum Operating Temperature 155 C —
Gehäuse SOD-123F (flat lead) SMD DO-35 (DO-204AH) hermetic axial-lead glass
Montageart Surface Mount Through-Hole
Terminal Position Dual —
Terminal Form Flat —
Number of Terminals 2 —
Package Shape Rectangular —
Typical Applications High-speed switching, voltage clamping, line termination, reverse polarity protection —
RoHS-Status Compliant Compliant
Reverse Leakage Current [DATA_NEEDED: reverse leakage current IR] [DATA_NEEDED: reverse leakage current at rated VR]
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Power Dissipation [DATA_NEEDED: total power dissipation Ptot] 430 mW
Diode Type — Small-signal Schottky barrier (RF) diode
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Betriebstemperatur — [DATA_NEEDED: operating temperature range]

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