BAT46WH vs 1N5711 Comparaison
Comparaison détaillée côte à côte de BAT46WH par Nexperia et 1N5711 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT46WH | 1N5711 |
|---|---|---|
| Marque | Nexperia | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,03 | $0,18 |
| Diode Configuration | Single | — |
| Technology | Planar Schottky barrier with integrated guard ring | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | — |
| Forward Current (IF) | 250 mA | — |
| Forward Voltage (VF) | 850 mV | 0.41 V (at 1 mA, per MACOM) |
| Non-Repetitive Peak Forward Current | 2.5 A | — |
| Maximum Operating Temperature | 155 C | — |
| Boîtier | SOD-123F (flat lead) SMD | DO-35 (DO-204AH) hermetic axial-lead glass |
| Type de montage | Surface Mount | Through-Hole |
| Terminal Position | Dual | — |
| Terminal Form | Flat | — |
| Number of Terminals | 2 | — |
| Package Shape | Rectangular | — |
| Typical Applications | High-speed switching, voltage clamping, line termination, reverse polarity protection | — |
| Statut RoHS | Compliant | Compliant |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current IR] | [DATA_NEEDED: reverse leakage current at rated VR] |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Power Dissipation | [DATA_NEEDED: total power dissipation Ptot] | 430 mW |
| Diode Type | — | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |