BAT46WH vs 1N5711 Comparación
Comparación detallada lado a lado de BAT46WH por Nexperia y 1N5711 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BAT46WH | 1N5711 |
|---|---|---|
| Marca | Nexperia | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,18 |
| Diode Configuration | Single | — |
| Technology | Planar Schottky barrier with integrated guard ring | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | — |
| Forward Current (IF) | 250 mA | — |
| Forward Voltage (VF) | 850 mV | 0.41 V (at 1 mA, per MACOM) |
| Non-Repetitive Peak Forward Current | 2.5 A | — |
| Maximum Operating Temperature | 155 C | — |
| Encapsulado | SOD-123F (flat lead) SMD | DO-35 (DO-204AH) hermetic axial-lead glass |
| Tipo de montaje | Surface Mount | Through-Hole |
| Terminal Position | Dual | — |
| Terminal Form | Flat | — |
| Number of Terminals | 2 | — |
| Package Shape | Rectangular | — |
| Typical Applications | High-speed switching, voltage clamping, line termination, reverse polarity protection | — |
| Estado RoHS | Compliant | Compliant |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current IR] | [DATA_NEEDED: reverse leakage current at rated VR] |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Power Dissipation | [DATA_NEEDED: total power dissipation Ptot] | 430 mW |
| Diode Type | — | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |