BAT46WH vs 1N5711 비교
다음의 상세 나란히 비교: BAT46WH 제조: Nexperia 및 1N5711 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BAT46WH | 1N5711 |
|---|---|---|
| 브랜드 | Nexperia | STMicroelectronics |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.03 | $0.18 |
| Diode Configuration | Single | — |
| Technology | Planar Schottky barrier with integrated guard ring | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | — |
| Forward Current (IF) | 250 mA | — |
| Forward Voltage (VF) | 850 mV | 0.41 V (at 1 mA, per MACOM) |
| Non-Repetitive Peak Forward Current | 2.5 A | — |
| Maximum Operating Temperature | 155 C | — |
| 패키지 | SOD-123F (flat lead) SMD | DO-35 (DO-204AH) hermetic axial-lead glass |
| 실장 유형 | Surface Mount | Through-Hole |
| Terminal Position | Dual | — |
| Terminal Form | Flat | — |
| Number of Terminals | 2 | — |
| Package Shape | Rectangular | — |
| Typical Applications | High-speed switching, voltage clamping, line termination, reverse polarity protection | — |
| RoHS 상태 | Compliant | Compliant |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current IR] | [DATA_NEEDED: reverse leakage current at rated VR] |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Power Dissipation | [DATA_NEEDED: total power dissipation Ptot] | 430 mW |
| Diode Type | — | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |