BAT46WH vs 1N5711 Comparação

Comparação detalhada lado a lado de BAT46WH por Nexperia e 1N5711 por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro BAT46WH 1N5711
Marca Nexperia STMicroelectronics
Categoria Diodes Diodes
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,03 $0,18
Diode Configuration Single —
Technology Planar Schottky barrier with integrated guard ring —
Repetitive Peak Reverse Voltage (VRRM) 100 V —
Forward Current (IF) 250 mA —
Forward Voltage (VF) 850 mV 0.41 V (at 1 mA, per MACOM)
Non-Repetitive Peak Forward Current 2.5 A —
Maximum Operating Temperature 155 C —
Encapsulamento SOD-123F (flat lead) SMD DO-35 (DO-204AH) hermetic axial-lead glass
Tipo de montagem Surface Mount Through-Hole
Terminal Position Dual —
Terminal Form Flat —
Number of Terminals 2 —
Package Shape Rectangular —
Typical Applications High-speed switching, voltage clamping, line termination, reverse polarity protection —
Status RoHS Compliant Compliant
Reverse Leakage Current [DATA_NEEDED: reverse leakage current IR] [DATA_NEEDED: reverse leakage current at rated VR]
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Power Dissipation [DATA_NEEDED: total power dissipation Ptot] 430 mW
Diode Type — Small-signal Schottky barrier (RF) diode
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Temperatura de operação — [DATA_NEEDED: operating temperature range]

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