BC817-40 vs BC817-40-RF Vergleich
Detaillierter Direktvergleich von BC817-40 von Nexperia und BC817-40-RF von Taiwan Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Taiwan Semiconductor
BC817-40-RF - 45V 0.5A NPN BJT SOT-23 | Taiwan Semiconductor
BC817-40-RF ✓ AktivSpezifikationsvergleich
| Parameter | BC817-40 | BC817-40-RF |
|---|---|---|
| Marke | Nexperia | Taiwan Semiconductor |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,03 |
| Transistortyp | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| Gehäuse | SOT-23 (TO-236AB), 3 pins | SOT-23 (TO-236), 3 pins |
| Kollektor-Emitter-Spannung (Vceo) | 45 V | 45 V |
| Kollektor-Basis-Spannung (Vcbo) | 50 V | 50 V |
| Emitter-Basis-Spannung (Vebo) | 5 V | 5 V |
| Continuous Collector Current (IC) | 500 mA | 0.5 A |
| Peak Collector Current (ICM) | [DATA_NEEDED: ICM value] | [DATA_NEEDED: peak pulsed collector current rating] |
| Total Power Dissipation (Ptot) | 310 mW | — |
| DC Current Gain (hFE) - -40 bin | 250 to 600 (at 100 mA, 1 V) | — |
| Übergangsfrequenz (ft) | 100 MHz | 100 MHz |
| Collector-Emitter Saturation Voltage (VCEsat) | 700 mV max (at 500 mA, 50 mA base) | — |
| Base-Emitter Voltage (VBE) | [DATA_NEEDED: VBE typical] | — |
| Betriebs-Sperrschichttemperatur | -65 C to +150 C | -55 C to +150 C |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant (per manufacturer product page) |
| Complementary PNP Part | BC807-40 | — |
| DC Current Gain (hFE) Bin | — | 250 to 600 (BC817-40 gain bin) |
| Power Dissipation (Pd) | — | 310 mW |
| Lead-Free | — | Yes (per Taiwan Semiconductor product page) |
| PNP Complement | — | BC807 series |