BC817-40 vs BC817-40-RF 对比
详细并排对比 BC817-40 出自 Nexperia 和 BC817-40-RF 出自 Taiwan Semiconductor。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BC817-40 | BC817-40-RF |
|---|---|---|
| 品牌 | Nexperia | Taiwan Semiconductor |
| 分类 | Transistors | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.02 | $0.03 |
| 晶体管类型 | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| 封装 | SOT-23 (TO-236AB), 3 pins | SOT-23 (TO-236), 3 pins |
| 集电极-发射极电压（Vceo） | 45 V | 45 V |
| 集电极-基极电压（Vcbo） | 50 V | 50 V |
| 发射极-基极电压（Vebo） | 5 V | 5 V |
| Continuous Collector Current (IC) | 500 mA | 0.5 A |
| Peak Collector Current (ICM) | [DATA_NEEDED: ICM value] | [DATA_NEEDED: peak pulsed collector current rating] |
| Total Power Dissipation (Ptot) | 310 mW | — |
| DC Current Gain (hFE) - -40 bin | 250 to 600 (at 100 mA, 1 V) | — |
| 过渡频率（ft） | 100 MHz | 100 MHz |
| Collector-Emitter Saturation Voltage (VCEsat) | 700 mV max (at 500 mA, 50 mA base) | — |
| Base-Emitter Voltage (VBE) | [DATA_NEEDED: VBE typical] | — |
| 工作结温 | -65 C to +150 C | -55 C to +150 C |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant (per manufacturer product page) |
| Complementary PNP Part | BC807-40 | — |
| DC Current Gain (hFE) Bin | — | 250 to 600 (BC817-40 gain bin) |
| Power Dissipation (Pd) | — | 310 mW |
| Lead-Free | — | Yes (per Taiwan Semiconductor product page) |
| PNP Complement | — | BC807 series |